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PDF UPA2520 Data sheet ( Hoja de datos )
| Número de pieza | UPA2520 | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | Renesas | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2520
N-CHANNEL MOS FET
FOR SWITCHING
DESCRIPTION
The μ PA2520 is N-channel MOS Field Effect Transistor
designed for DC/DC converter and power management
applications of portable equipments.
PACKAGE DRAWING (Unit: mm)
2.9±0.1
0.65
8
5
A
0.17±0.05
FEATURES
• Low on-state resistance
RDS(on)1 = 13.2 mΩ MAX. (VGS = 10 V, ID = 10 A)
RDS(on)2 = 17 mΩ MAX. (VGS = 4.5 V, ID = 5.0 A)
• Built-in gate protection diode
• Small and surface mount package (8-pin VSOF (2429))
• Pb-free (This product does not contain Pb in external electrode
and other parts.)
0 to 0.025
1
0.32±0.05
4
0.05 M S A
1, 2, 3 : Source
4 : Gate
5, 6, 7, 8: Drain
S
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation Note2
Total Power Dissipation (PW = 5 sec) Note2
ID(DC)
ID(pulse)
PT1
PT2
±10
±40
1.0
2.2
A
A
W
W
Channel Temperature
Tch 150 °C
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Tstg −55 to +150 °C
IAS 10 A
EAS 10 mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board of 25.4 mm x 25.4 mm x 0.8 mmt
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G19186EJ1V0DS00 (1st edition)
Date Published March 2008 NS
Printed in Japan
2008
1 page  
μ PA2520
DYNAMIC INPUT CHARACTERISTICS
6
5
VDD = 6 V
4
15 V
24 V
3
2
1
ID = 10 A
0
0 5 10 15
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
10 V
10
VGS = 4.5 V
0V
1
0.1
0.01
0
Pulsed
0.2 0.4 0.6 0.8 1 1.2
VF(S-D) - Source to Drain Voltage - V
ORDERING INFORMATION
PART NUMBER
μ PA2520T1H-T1-AT Note
μ PA2520T1H-T2-AT Note
LEAD PLATING
Pure Sn
PACKING
8 mm embossed taping
3000 p/reel
Note Pb-free (This product does not contain Pb in external electrode and other parts.)
PACKAGE
8-pin VSOF (2429)
Data Sheet G19186EJ1V0DS
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet UPA2520.PDF ] | |
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