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부품번호 | UPA2821T1L 기능 |
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기능 | MOS FIELD EFFECT TRANSISTOR | ||
제조업체 | Renesas | ||
로고 | |||
전체 8 페이지수
μPA2821T1L
MOS FIELD EFFECT TRANSISTOR
PreliminaryData Sheet
R07DS0753EJ0100
Rev.1.00
May 25, 2012
Description
The μPA2821T1L is N-channel MOS Field Effect Transistor designed for power management applications of a
notebook computer and Lithium-Ion battery protection circuit.
Features
• VDSS = 30 V (TA = 25°C)
• Low on-state resistance
⎯ RDS(on) = 3.8 mΩ MAX. (VGS = 10 V, ID = 26 A)
• 4.5 V Gate-drive available
• Small surface mount package (8-pin HVSON (3333))
• Pb-free, Halogen Free
Ordering Information
Part No.
Lead Plating
Packing
Package
μPA2821T1L-E1-AT ∗1
Pure Sn (Tin)
Tape 3000 p/reel 8-pin HVSON (3333)
μPA2821T1L-E2-AT ∗1
typ. 0.028 g
Note: ∗1. Pb-free (This product does not contain Pb in external electrode and other parts.)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ∗1
Total Power Dissipation ∗2
Total Power Dissipation (PW = 10 sec) ∗2
Total Power Dissipation (TC = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current ∗3
Signal Avalanche Energy ∗3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
PT3
Tch
Tstg
IAS
EAS
Ratings
30
±20
±26
±104
1.5
3.8
52
150
−55 to +150
18
32.4
Unit
V
V
A
A
W
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Rth(ch-A)
Channel to Case (Drain) Thermal Resistance Rth(ch-C)
83.3
2.4
°C/W
°C/W
Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%
∗2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
∗3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
R07DS0753EJ0100 Rev.1.00
May 25, 2012
Page 1 of 6
μPA2821T1L
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
3
2
1
0
-50
VDS = 10 V,
ID = 1.0 mA
0 50 100 150
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
8
7 Pulsed
6
5
4 VGS = 4.5 V
3
10 V
2
1
0
1 10 100 1000
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
8
Pulsed
6 VGS = 4.5 V
ID = 6.5 A
4
VGS = 10 V
2 ID = 26A
0
-50 0 50 100 150
Tch - Channel Temperature - °C
R07DS0753EJ0100 Rev.1.00
May 25, 2012
Chapter Title
FORWARD TRANSFER ADMITTANCE vs. DRAIN
CURRENT
100
Pulsed,
VDS = 5 V
10
1
0.1
0.01
0.01
Tch = 150°C
75°C
25°C
–55°C
0.1 1 10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
Pulsed
15
10
5 ID = 26 A
0
0 5 10 15 20
VGS - Gate to Source Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
100
0.1
Crss
Coss
VGS = 0 V
f = 1.0 MHz
1 10 100
VDS - Drain to Source Voltage - V
Page 4 of 6
4페이지 Revision History
μ PA2821T1L Data Sheet
Rev.
1.00
Date
May 25, 2012
Page
− First Edition Issued
Description
Summary
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UPA2821T1L | MOS FIELD EFFECT TRANSISTOR | Renesas |
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