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PDF FDMS8820 Data sheet ( Hoja de datos )
| Número de pieza | FDMS8820 | |
| Descripción | N-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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FDMS8820
N-Channel PowerTrench® MOSFET
30 V, 160 A, 2.0 mΩ
Features
Max rDS(on) = 2.0 mΩ at VGS = 10 V, ID = 28 A
Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 25 A
Advanced Package and Silicon combination for low rDS(on)
and high efficiency
Next generation enhanced body diode technology,
engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
May 2015
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Applications
VRM Vcore Switching For Desktop And Server
OringFET / Load Switching
DC-DC Conversion
Pin 1
Top
Bottom
Pin 1
S
S
S
G
Power 56
D
D
DD
S
S
S
G
D
D
D
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Continuous
-Pulsed
TC = 25 °C
TC = 100 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 6)
(Note 6)
(Note 1a)
(Note 5)
(Note 3)
(Note 1a)
Ratings
30
±20
160
101
28
634
294
78
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
(Note 1a)
1.6
50
°C/W
Device Marking
FDMS8820
Device
FDMS8820
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMS8820 Rev. 1.3
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted.
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
10-5
10-4
10-3
10-2
t, RECTANGULAR PULSE DURATION (sec)
PDM
t1
t2
NOTES:
ZθJC(t) = r(t) x RθJC
RθJC = 1.6 oC/W
Peak TJ = PDM x ZθJC(t) + TC
Duty Cycle, D = t1 / t2
10-1
1
Figure 13. Junction-to-Case Transient Thermal Response Curve
©2012 Fairchild Semiconductor Corporation
FDMS8820 Rev. 1.3
5
www.fairchildsemi.com
5 Page | ||
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| PDF Descargar | [ Datasheet FDMS8820.PDF ] | |
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