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부품번호 | UPA2737GR 기능 |
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기능 | P-channel MOSFET | ||
제조업체 | Renesas | ||
로고 | |||
전체 8 페이지수
Data Sheet
μPA2737GR
P-channel MOSFET
–30 V, –11 A, 13 mΩ
R07DS0869EJ0100
Rev.1.00
Aug 28, 2012
Description
The μ PA2737GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management
applications of portable equipment.
Features
• VDSS = −30 V (TA = 25°C)
• Low on-state resistance
⎯ RDS(on) = 13 mΩ MAX. (VGS = −10 V, ID = −11 A)
• 4.5 V Gate-drive available
• Small and surface mount package (Power SOP8)
• Pb-free and Halogen free
Ordering Information
Power SOP8
Part No.
μ PA2737GR-E1-AT
μ PA2737GR-E2-AT
LEAD PLATING
Pure Sn
PACKING
Tape 2500 p/reel
Package
Power SOP8
0.08 g TYP.
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) ∗1
Total Power Dissipation ∗2
Total Power Dissipation (PW = 10 sec) ∗2
Channel Temperature
Storage Temperature
Single Avalanche Current ∗3
Single Avalanche Energy ∗3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAS
EAS
Ratings
−30
m20
m11
m110
1.1
2.5
150
−55 to +150
11
12.1
Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Rth(ch-A)
114
°C/W
Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%
∗2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
∗3. Starting Tch = 25°C, VDD = −15 V, RG = 25 Ω, VGS = −20 → 0 V, L = 100 μH
Unit
V
V
A
A
W
W
°C
°C
A
mJ
R07DS0869EJ0100 Rev.1.00
Aug 28, 2012
Page 1 of 6
μPA2737GR
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
-3
-2
-1
-0
-50
Pulsed
VDS = –10 V
ID = –1mA
0 50 100 150
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
40
Pulsed
30
20 VGS = –4.5 V
10
0
-1
–10 V
-10 -100
ID - Drain Current - A
-1000
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
25
Pulsed
ID = –11 A
20
VGS = –4.5 V
15
10
VGS = –10 V
5
0
-50
0
50 100 150
Tch - Channel Temperature - °C
R07DS0869EJ0100 Rev.1.00
Aug 28, 2012
FORWARD TRANSFER ADMITTANCE vs. DRAIN
CURRENT
100
TA = 150°C
75°C
10 25°C
–55°C
1
0.1
-0.01
Pulsed
VDS = –10 V
-0.1 -1
ID - Drain Current - A
-10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
Pulsed
25 ID = –11 A
20
15
10
5
0
-0 -5 -10 -15 -20
VGS - Gate to Source Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
VGS = 0 V
f = 1 MHz
100
-0.1 -1
Crss
Coss
-10 -100
VDS - Drain to Source Voltage - V
Page 4 of 6
4페이지 Revision History
μ PA2737GR Data Sheet
Rev.
1.00
Date
Aug 28, 2012
Page
− First Edition Issued
Description
Summary
All trademarks and registered trademarks are the property of their respective owners.
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부품번호 | 상세설명 및 기능 | 제조사 |
UPA2737GR | P-channel MOSFET | Renesas |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |