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부품번호 | FQD3N60C 기능 |
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기능 | 600V N-Channel MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 8 페이지수
FQD3N60C
600V N-Channel MOSFET
Features
• 2.4A, 600V, RDS(on) = 3.4Ω @VGS = 10 V
• Low gate charge ( typical 10.5 nC)
• Low Crss ( typical 5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
January 2006
QFET TM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge
topology.
D
GS
D-PAK
FQD Series
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA*
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
{D
z
G{
z
z
{S
FQD3N60C
600
2.4
1.5
9.6
±30
150
2.4
5.0
4.5
50
0.4
-55 to +150
300
Typ.
--
--
--
Max.
2.5
50
110
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FQD3N60C REV. A
1
www.fairchildsemi.com
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
♦ Notes :
1. VGS = 0 V
2. ID = 250 µA
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 9. Maximum Safe Operating Area
101
100
10-1
10-2
100
Operation in This Area
is Limited by R DS(on)
100 µs10 µs
1 ms
10 ms
DC
Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
VDS, Drain-Source Voltage [V]
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
♦ Notes :
1. VGS = 10 V
2. ID = 1.2 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
2.5
2.0
1.5
1.0
0.5
0.0
25
50 75 100 125
TC, Case Temperature [ ]
150
Figure 11. Transient Thermal Response Curve
D =0.5
100
0 .2
0 .1
0 .0 5
1 0 -1
0 .0 2
0 .0 1
single pulse
N otes :
1 . Z θ JC(t) = 2 .5 /W M a x .
2. D uty F actor, D = t1/t2
3 . T JM - T C = P DM * Z θ JC(t)
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a ve P u lse D u ra tio n [se c]
101
600V N-Channel MOSFET REV. A
4
www.fairchildsemi.com
4페이지 Mechanical Dimensions
D-PAK
600V N-Channel MOSFET REV. A
7
Dimensions in Millimeters
www.fairchildsemi.com
7페이지 | |||
구 성 | 총 8 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
FQD3N60 | 600V N-Channel MOSFET | Fairchild Semiconductor |
FQD3N60C | 600V N-Channel MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |