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FDS4410A 데이터시트 PDF




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부품번호 FDS4410A 기능
기능 Single N-Channel PowerTrench MOSFET
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FDS4410A 데이터시트, 핀배열, 회로
May 2005
FDS4410A
Single N-Channel, Logic-Level, PowerTrench® MOSFET
Features
10 A, 30 V. RDS(ON) = 13.5 m@ VGS = 10 V
RDS(ON) = 20 m@ VGS = 4.5 V
Fast switching speed
Low gate charge
High performance trench technology for extremely low
RDS(ON)
High power and current handling capability
General Description
This N-Channel Logic Level MOSFET is produced using Fair-
child Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.
D
D
D
D
SO-8
Pin 1
G
S
S
S
54
63
72
81
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain–Source Voltage
Gate–Source Voltage
Drain Current
– Continuous
– Pulsed
Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
(Note 1)
Ratings
30
±20
10
50
2.5
1.0
–55 to +150
50
125
25
Package Marking and Ordering Information
Device Marking
FDS4410A
Device
FDS4410A
Reel Size
13"
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
©2005 Fairchild Semiconductor Corporation
FDS4410A Rev. B
1
www.fairchildsemi.com




FDS4410A pdf, 반도체, 판매, 대치품
Typical Characteristics
10
ID = 10 A
8
6
VDS = 10V
20V
15V
4
2
0
0 5 10 15 20 25
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
100µs
1ms
10ms
100ms
1s
10s
DC
VGS = 10V
0.1 SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
0.01
0.01
0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
1600
1200
800
f = 1MHz
VGS = 0 V
Ciss
Coss
400
Crss
0
0
5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
40
RθJA = 125°C/W
TA = 25°C
30
20
10
0
0.001
0.01
0.1 1
t1, TIME (sec)
10 100
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.0001
SINGLE PULSE
0.001
0.01
0.1
t1, TIM E (sec)
1
RθJA (t) = r(t) * RθJA
RθJA = 125°C/W
P(pk)
t1
t2
TJ - TA = P * RθJA (t)
Duty Cycle, D = t1/t2
10 100
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the cir cuit board design.
1000
FDS4410A Rev. B
4 www.fairchildsemi.com

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