|
|
PDF DTA114TE Data sheet ( Hoja de datos )
| Número de pieza | DTA114TE | |
| Descripción | PNP Digital Transistor | |
| Fabricantes | Taiwan Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de DTA114TE (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
DTA114 TM/TE/TUA/TCA/TSA
PNP Digital Transistor
Small Signal Diode
Features
Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input resistor
(see equivalent circuit).
The bias resistors consist of thin -film resistors with
complete isolation to allow negative biasing of the
input.They also have the advantage of almost
completely eliminating parasitic effects.
Only the on/off conditions need to be set for
operation,marking device design easy.
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code.
Ordering Information
1
Package
SOT-723
SOT-523
SOT-323
SOT-23
TO-92S
Part No.
Packing
DTA114 TM 8K / 7" Reel
DTA114 TE 3K / 7" Reel
DTA114 TUA 3K / 7" Reel
DTA114 TCA 3K / 7" Reel
DTA114 TSA 3K / 7" Reel
Marking
94
94
94
94
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
2
123
Type Number
Power Dissipation
Collector-Emitter Voltage
Emitter-Base Voltage
Emitter-Base Voltage
Collector Current
Junction and Storage Temperature Range
Symbol
PD
VCBO
VCEO
VEBO
IC
TJ, TSTG
TM TE
100 150
Notes:1. Valid provided that electrodes are kept at ambient temperature
3
SOT-723/SOT-523
SOT-323/SOT-23
1.IN
2.GND
3.OUT
TO-92S
1.GND
2.OUT
3.IN
Value
TUA TCA
200
-50
-50
-5
-100
-55 to + 150
TSA Units
300 mW
V
V
mA
°C
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Min
-50
-50
-5
Typ
Max
-0.5
Condtion
Ic=-50µA,IE=0
Ic=-1mA,IB=0
IE=-50µA,IC=0
VCB=-50V,IE=0
IEBO -0.5 VEB=-4V,IC=0
VCE(sat)
hFE
R1
fT
100
7
-0.3
250 600
10 13
IC=-10mA,IB=-1mA
VCE=-5V,IC=-1mA
250 VCE=-10V,IE=-5mA, f=100MHz
Unit
V
V
V
μA
μA
V
KΩ
MHz
Version:B12
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet DTA114TE.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| DTA114T | PNP SILICON BIAS RESISTOR TRANSISTOR |  ON Semiconductor |
| DTA114T | DIGITAL TRANSISTORS |  Unisonic Technologies |
| DTA114TCA | PNP Digital Transistor | Taiwan Semiconductor |
| DTA114TE | PNP -100mA -50V Digital Transistors |  ROHM Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |