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PDF DTA114EM Data sheet ( Hoja de datos )
| Número de pieza | DTA114EM | |
| Descripción | PNP Digital Transistor | |
| Fabricantes | Taiwan Semiconductor | |
| Logotipo |  |
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DTA114 EM/EE/EUA/ECA/ESA
PNP Digital Transistor
Small Signal Diode
Features
Built-in bias resistors enable the configuration of
an inverter circuit without connecting external input
resistor (see equivalent circuit).
TheThe bias resistors consist of thin -film
resistors with complete isolation to allow negative
biasing of the input.They also have the advantage
of almost completel yeliminating parasitic effects.
Only the on/off conditions need to be set for
operation,marking device design easy.
Green compound (Halogen free) with suffix "G"
on packing code and prefix "G" on date code.
3 SOT-723/SOT-523
SOT-323/SOT-23
Ordering Information
Package
Part No.
Packing Marking
SOT-723 DTA114 EM 8K / 7" Reel 14
1
2
1.IN
2.GND
3.OUT
SOT-523
SOT-323
SOT-23
TO-92S
DTA114 EE 3K / 7" Reel
DTA114 EUA 3K / 7" Reel
DTA114 ECA 3K / 7" Reel
DTA114 ESA 3K / 7" Reel
14
14
14
TO-92S
1.GND
2.OUT
12 3 3.IN
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Type Number
Power Dissipation
Supply Voltage
Input Voltage
Output Current
PeakCollectoCurrent
Junction and Storage Temperature Range
Symbol
PD
VCC
VIN
IO
IC(MAX)
TJ, TSTG
EM EE
100 150
Notes:1. Valid provided that electrodes are kept at ambient temperature
Value
EUA ECA
200
-50
-40～10
-50
-100
-55 to + 150
ESA
300
Units
mW
V
V
mA
°C
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol
VI(on)
VI(off)
VO(on)
II
IO（off)
GI
R1
R2/R1
fT
Min
-0.5
30
7
0.8
Typ Max
-3
-0.3
-0.88
-0.5
10 13
Condtion
VCC=-5V,IO=-100μA
VO=-0.3V,IO=-10mA
IO/II=-10mA/-5mA
VI=-5V
VCC=-50V,VI=0
VO=-5V,IO=-5mA
1 1.2
250 VO=-10V,IO=-5mA,f=100MHz
Unit
V
V
mA
μA
KΩ
MHz
Version:B12
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet DTA114EM.PDF ] | |
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