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PDF DTU20N10 Data sheet ( Hoja de datos )
| Número de pieza | DTU20N10 | |
| Descripción | N-Channel 100 V (D-S) MOSFET | |
| Fabricantes | Din-Tek | |
| Logotipo |  |
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N-Channel 100 V (D-S) MOSFET
DTU20N10
www.din-tek.jp
PRODUCT SUMMARY
VDS (V)
100
RDS(on) () Max.
0.066 at VGS = 10 V
0.080 at VGS = 4.5 V
ID (A)
20
15.2
Qg (Typ.)
19.8
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Material categorization:
TO-252
D
G
APPLICATIONS
• DC/DC Converters
• DC/AC Inverters
• Motor Drives
GD S
Top View
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (t = 300 µs)
Avalanche Current
Single Avalanche Energya
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 70 °C
L = 0.1 mH
TC = 25 °C
TA = 25 °Cc
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
Limit
100
± 20
20
15.2
25
15
11.25
41.7b
2.1
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)c
Junction-to-Case (Drain)
Notes:
a. Duty cycle 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
d. Base on TC = 25 °C.
Symbol
RthJA
RthJC
Limit
60
3
Unit
°C/W
1
1 page  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
DTU20N10
www.din-tek.jp
TJ = 25 °C
10
TJ = 150 °C
1
0.000001
0.00001
0.0001
Time (s)
0.001
0.01
Single Pulse Avalanche Current Capability vs. Time
2
1 Duty Cycle = 0.5
10 Limited by RDS(on)*
100 μs
1 ms
1
10 ms
DC, 10 s 1 s, 100 ms
0.1
TC = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10 30
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet DTU20N10.PDF ] | |
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