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PDF SUD06N10-225L-GE3 Data sheet ( Hoja de datos )
| Número de pieza | SUD06N10-225L-GE3 | |
| Descripción | N-Channel 100V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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SUD06N10-225L-GE3
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
100
RDS(on) ()
0.200 at VGS = 10 V
0.225 at VGS = 4.5 V
ID (A)
6.5
6
TO-252
Qg (Typ)
2.7
FEATURES
• TrenchFET® Power MOSFETs
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
D
G DS
Top View
Drain Connected to Tab
Order Number:
SUD06N10-225L-GE3 (Lead (Pb)-free and Halogen-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)b
TC = 25 °C
TC = 125 °C
ID
Pulsed Drain Current
IDM
Continuous Source Current (Diode Conduction)
IS
Avalanche Current
IAR
Repetitive Avalanche Energy (Duty Cycle 1 %)
L = 0.1 mH
EAR
Maximum Power Dissipation
TC = 25 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
100
± 20
6.5
2.9
8
6.5
5
1.25
16.7b
1.25a
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambienta
Junction-to-Case
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See SOA curve for voltage derating.
t 10 sec
Steady State
Symbol
RthJA
RthJC
Typical
40
80
6
Maximum
50
100
7.5
Unit
°C/W
Document Number: 62831
For technical questions, contact: [email protected]
www.vishay.com
S13-0193-Rev. A, 28-Jan-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
Package Information
Vishay Siliconix
TO-252AA Case Outline
E
b3
b b2
e
e1
E1
A
C2
C
A1
MILLIMETERS
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.18
2.38
0.086
0.094
A1 - 0.127 - 0.005
b
0.64
0.88
0.025
0.035
b2
0.76
1.14
0.030
0.045
b3
4.95
5.46
0.195
0.215
C
0.46
0.61
0.018
0.024
C2
0.46
0.89
0.018
0.035
D
5.97
6.22
0.235
0.245
D1 4.10
- 0.161 -
E
6.35
6.73
0.250
0.265
E1 4.32
- 0.170 -
H
9.40
10.41
0.370
0.410
e 2.28 BSC
0.090 BSC
e1 4.56 BSC
0.180 BSC
L
1.40
1.78
0.055
0.070
L3
0.89
1.27
0.035
0.050
L4 - 1.02 - 0.040
L5 1.01 1.52
ECN: T13-0359-Rev. O, 03-Jun-13
DWG: 5347
0.040
0.060
Notes
• Dimension L3 is for reference only.
• Xi’an, Mingxin, and GEM SH actual photo.
Revision: 03-Jun-13
1 Document Number: 71197
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
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