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PDF FDD8453LZ Data sheet ( Hoja de datos )
| Número de pieza | FDD8453LZ | |
| Descripción | N-Channel Power Trench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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March 2015
FDD8453LZ
N-Channel PowerTrench® MOSFET
40V, 50A, 6.7mΩ
Features
Max rDS(on) = 6.7mΩ at VGS = 10V, ID = 15A
Max rDS(on) = 8.7mΩ at VGS = 4.5V, ID = 13A
HBM ESD protection level >7kV typical (Note 4)
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance and
switching loss. G-S zener has been added to enhance ESD
voltage level.
Applications
Inverter
Synchronous Rectifier
D
G
S
D
DT O- P-2A5K2
(TO-252)
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25°C
TC = 25°C
TA = 25°C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
40
±20
50
75
16.4
100
253
65
3.1
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.9
40
°C/W
Device Marking
FDD8453LZ
Device
FDD8453LZ
Package
D-PAK (TO-252)
Reel Size
13’’
Tape Width
16mm
Quantity
2500 units
©2007 Fairchild Semiconductor Corporation
FDD8453LZ Rev. 1.1
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25°C unless otherwise noted
8000
VGS =10V
1000
100
50
10-5
FOR TEMPERATURES
ABOVE 25oCSDINERGALTEEPPUELASKE
CURRENT ASRθFJOCL=LO1.W9oSC: /W
I = I25
1---T-5---C0-----–=----T-2---C-5---oC
125
TC = 25oC
10-4
10-3
10-2
10-1
100
101
102
103
t, PULSE WIDTH (s)
Figure 13. Single Pulse Maximum Power Dissipation
2
1 DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.1 0.02
0.01
0.01
0.005
10-5
SINGLE PULSE
RθJC = 1.9oC/W
10-4
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
100
101
Figure 14. Transient Thermal Response Curve
2
DUTY CYCLE-DESCENDING ORDER
1
0.1
0.01
0.005
10-3
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
SINGLE PULSE
RθJA = 40oC/W
(Note 1a)
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-2 10-1 100 101
t, RECTANGULAR PULSE DURATION (s)
102
Figure 15. Transient Thermal Response Curve
103
©2007 Fairchild Semiconductor Corporation
FDD8453LZ Rev. 1.1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDD8453LZ.PDF ] | |
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