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P14NK60ZFP PDF 데이터시트 ( Data , Function )

부품번호 P14NK60ZFP 기능
기능 STP14NK60ZFP
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P14NK60ZFP 데이터시트, 핀배열, 회로
STP14NK60Z - STP14NK60ZFP
STB14NK60Z/-1 - STW14NK60Z
N-channel 600V - 0.45- 13.5A TO-220/FP-D2/I2PAK-TO-247
Zener-protected SuperMESHTM Power MOSFET
General features
Type
STP14NK60Z
STP14NK60ZFP
STB14NK60Z
STB14NK60Z-1
STW14NK60Z
VDSS
600V
600V
600V
600V
600V
RDS(on) ID
<0.513.5A
<0.513.5A
<0.513.5A
<0.513.5A
<0.513.5A
Pw
160W
40W
160W
160W
160W
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatibility
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
Applications
Switching application
3
2
1
TO-220
3
1
D2PAK
TO-247
3
2
1
TO-220FP
123
I2PAK
Internal schematic diagram
Order codes
Part number
STP14NK60Z
STP14NK60ZFP
STB14NK60ZT4
STB14NK60Z-1
STW14NK60Z
July 2006
Marking
P14NK60Z
P14NK60ZFP
B14NK60Z
B14NK60Z
W14NK60Z
Package
TO-220
TO-220FP
D2PAK
I2PAK
TO-247
Rev 7
Packaging
Tube
Tube
Tape & reel
Tube
Tube
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19




P14NK60ZFP pdf, 반도체, 판매, 대치품
Electrical ratings
STP14NK60Z-STP14NK60ZFP-STB14NK60Z-STB14NK60Z-1-STW14NK60Z
Table 3. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAS (pulse width limited by Tj Max)
Single pulse avalanche energy
EAS (starting Tj=25°C, Id=Iar, Vdd=50V)
Value
12
300
Unit
A
mJ
Table 4. Gate-source zener diode
Symbol
Parameter
Test conditions Min. Typ. Max. Unit
BVGSO(1)
Igs=±1mA
Gate-source breakdown voltage
(Open Drain)
30
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
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P14NK60ZFP 전자부품, 판매, 대치품
STP14NK60Z-STP14NK60ZFP-STB14NK60Z-STB14NK60Z-1-STW14NK60Z Electrical characteris-
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area for TO-
220/D2PAK/I2PAK
Figure 2. Thermal impedance for TO-
220/D2PAK/I2PAK
Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP
Figure 5. Safe operating area for TO-247
Figure 6. Thermal impedance for TO-247
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P14NK60ZFP

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