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PDF L2SB1197KRLT3G Data sheet ( Hoja de datos )
| Número de pieza | L2SB1197KRLT3G | |
| Descripción | Low Frequency Transistor | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
Low Frequency Transistor
L2SB1197KQLT1G Series
PNP Silicon
S-L2SB1197KQ LT1G Series
FEATURE
ƽHigh current capacity in compact package.
IC = í0.8A.
3
ƽEpitaxial planar type.
ƽNPN complement: L2SD1781K
1
ƽWe declare that the material of product compliance with RoHS requirements.
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
2
SOT– 23 (TO–236AB)
DEVICE MARKING AND ORDERING INFORMATION
Device
L2SB1197KQLT1G
S-L2SB1197KQLT1G
L2SB1197KQLT3G
S-L2SB1197KQLT3G
L2SB1197KRLT1G
S-L2SB1197KRLT1G
L2SB1197KRLT3G
S-L2SB1197KRLT3G
MAXIMUM RATINGS(Ta=25qC)
Marking
AHQ
AHQ
AHR
AHR
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
−40
−32
−5
−0.8
0.2
150
−55 to 150
Unit
V
V
V
A
W
°C
°C
ELECTRICAL CHARACTERISTICS(Ta=25qC)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO −40
Collector-emitter breakdown voltage BVCEO −32
Emitter-base breakdown voltage
BVEBO −5
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage VCE(sat) −
DC current transfer ratio
hFE 120
Transition frequency
fT −
Output capacitance
Cob −
Typ. Max. Unit
−−V
−−V
−−V
− −0.5 µA
− −0.5 µA
− −0.5
V
− 390 −
200 − MHz
12 30 pF
hFE values are classified as follows :
Item(*)
Q
R
hFE 120~270 180~390
1
BASE
3
COLLECTOR
2
EMITTER
Conditions
IC= −50µA
IC= −1mA
IE= −50µA
VCB= −20V
VEB= −4V
IC/IB= −0.5A/ −50mA
VCE= −3V, IC= −100mA
VCE= −5V, IE=50mA, f=100MHz
VCB= −10V, IE=0A, f=1MHz
Rev.O 1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet L2SB1197KRLT3G.PDF ] | |
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