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FQD12P10TM_F085 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 FQD12P10TM_F085은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 FQD12P10TM_F085 기능
기능 100V P-Channel MOSFET
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


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FQD12P10TM_F085 데이터시트, 핀배열, 회로
February 2010
FQD12P10TM_F085
100V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Features
• -9.4A, -100V, RDS(on) = 0.29@VGS = -10 V
• Low gate charge ( typical 21 nC)
• Low Crss ( typical 65 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Qualified to AEC Q101
RoHS Compliant
tm
DD
G S D-PAK
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
(Note 3)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8! from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
©2010 Fairchild Semiconductor Corporation
FQD12P10TM_F085 Rev. A
1
G
Ratings
-100
-9.4
-6.0
-37.6
± 30
370
-9.4
5.0
-6.0
2.5
50
0.4
-55 to +150
300
S
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Typ Max Units
-- 2.5 °C/W
-- 50 °C/W
-- 110 °C/W
www.fairchildsemi.com




FQD12P10TM_F085 pdf, 반도체, 판매, 대치품
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
" Notes :
1. VGS = 0 V
2. ID = -250 # A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 7. Breakdown Voltage Variation
vs. Temperature
102 Operation in This Area
is Limited by R DS(on)
100 µs
101 1 ms
10 ms
DC
100
10-1
100
" Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101
-VDS, Drain-Source Voltage [V]
102
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
" Notes :
1. VGS = -10 V
2. ID = -4.7 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs. Temperature
10
8
6
4
2
0
25 50 75 100 125 150
TC, Case Temperature [!]
Figure 10. Maximum Drain Current
vs. Case Temperature
100
1 0 -1
D =0.5
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
" N otes :
1. Z$
(t) =
JC
2 .5
! /W
M ax.
2. D u ty F actor, D =t1/t2
3 . T JM - TC = P DM * Z$ JC(t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a ve P u ls e D u ra tio n [se c]
Figure 11. Transient Thermal Response Curve
101
FQD12P10TM_F085 Rev. A
4
www.fairchildsemi.com

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FQD12P10TM_F085 전자부품, 판매, 대치품
Package Dimensions
(0.50)
6.60 ±0.20
5.34 ±0.30
(4.34)
D-PAK
(0.50)
2.30 ±0.10
0.50 ±0.10
MAX0.96
2.30TYP
[2.30±0.20]
0.76 ±0.10
2.30TYP
[2.30±0.20]
6.60 ±0.20
(5.34)
(5.04)
(1.50)
0.50 ±0.10
1.02 ±0.20
2.30 ±0.20
(2XR0.25)
FQD12P10TM_F085 Rev. A
0.76 ±0.10
Dimensions in Millimeters
7 www.fairchildsemi.com

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FQD12P10TM_F085

100V P-Channel MOSFET

Fairchild Semiconductor
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