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RJK03P7DPA PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 RJK03P7DPA
기능 Built in SBD Dual N-channel Power MOS FET
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RJK03P7DPA 데이터시트, 핀배열, 회로
Preliminary Datasheet
RJK03P7DPA
MOS1 30 V, 15 A, 9.4 mmax.
MOS2 30 V, 30 A, 5.3 mmax.
Built in SBD Dual N-channel Power MOS FET
High Speed Power Switching
R07DS0906EJ0110
Rev.1.10
Nov 01, 2012
Features
Low on-resistance
Capable of 4.5 V gate drive
High density mounting
Pb-free
Halogen-free
Outline
RENESAS Package code: PWSN0008DD-B
(Package name: WPAK-D(3))
5 678
1
G1
234
D1 D1 D1
8
G2
4 32 1
MOS1
9
S1/D2
5678
9
S2 S2 S2
56 7
4321
(Bottom View)
MOS2 and
Schottky Barrier Diode
1, 8 Gate
2, 3, 4, 9 Drain
5, 6, 7, 9 Source
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAS Note 2
Pch Note3
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50 
3. Tc=25C
MOS1
30
±20
15
60
15
8.5
7.23
10
150
–55 to +150
Ratings
MOS2
30
±20
30
120
30
12
14.4
20
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
R07DS0906EJ0110 Rev.1.10
Nov 01, 2012
Page 1 of 10




RJK03P7DPA pdf, 반도체, 판매, 대치품
RJK03P7DPA
Main Characteristics
• MOS1
Power vs. Temperature Derating
20
15
10
5
0 50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
20
4.5 V
10 V 3.0V
16
2.8 V
Pulse Test
12
8 2.6 V
4
VGS = 2.4 V
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
200
Pulse Test
150
100
ID = 10 A
50 5 A
2A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
R07DS0906EJ0110 Rev.1.10
Nov 01, 2012
Preliminary
Maximum Safe Operation Area
1000
100
1 ms
10
s
10
1 this area is
DS(on)
Tc = 25 °C
0.1 1 shot Pulse
0.1 1
10
100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
20
VDS = 5 V
Pulse Test
16
12
8
4
Tc = 75°C
25°C
–25°C
0
12
34
5
Gate to Source Voltage VGS (V)
Static Drain to Source On State Resistance
vs. Drain Current
100
Pulse Test
30
10 VGS = 4.5 V
10 V
3
1
1 3 10 30 100 300 1000
Drain Current ID (A)
Page 4 of 10

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RJK03P7DPA 전자부품, 판매, 대치품
RJK03P7DPA
• MOS2 and Schottky Barrier Diode
Power vs. Temperature Derating
40
30
20
10
0 50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
50
4.5 V
10 V
40
2.7 V
Pulse Test
2.6 V
30
2.5 V
20
10
VGS = 2.4 V
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
200
Pulse Test
150
100
ID = 20 A
50
10 A
5A
0 4 8 12 16
Gate to Source Voltage VGS (V)
R07DS0906EJ0110 Rev.1.10
Nov 01, 2012
Preliminary
Maximum Safe Operation Area
1000
100 1 ms 1001μ0sμs
10
PW = 10 ms
Operation in
1 this area is
limited by RDS(on)
Tc = 25 °C
0.1 1 shot Pulse
0.1 1
10
100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
50
VDS = 5 V
Pulse Test
40
30
20
10
Tc = 75°C
25°C
–25°C
0 1 2 34 5
Gate to Source Voltage VGS (V)
Static Drain to Source On State Resistance
vs. Drain Current
100
Pulse Test
30
10
VGS = 4.5 V
3 10 V
1
1 3 10 30 100 300 1000
Drain Current ID (A)
Page 7 of 10

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RJK03P7DPA

Built in SBD Dual N-channel Power MOS FET

Renesas Technology
Renesas Technology

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