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RJK0851DPB PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 RJK0851DPB
기능 Silicon N Channel Power MOS FET
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RJK0851DPB 데이터시트, 핀배열, 회로
RJK0851DPB
80V, 20A, 23mmax.
Silicon N Channel Power MOS FET
Power Switching
Preliminary Datasheet
R07DS0079EJ0200
Rev.2.00
Apr 09, 2013
Functions
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 18 mtyp. (at VGS = 10 V)
Pb-free
Halogen-free
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
1 234
5
D
4 1, 2, 3 Source
G 4 Gate
5 Drain
SSS
123
Application
Switching Mode Power Supply
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50
3. Tc = 25C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAS Note 2
Pch Note3
ch-C
Tch
Tstg
Ratings
80
20
20
80
20
10
13.3
45
2.78
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
This product is for the low voltage drive (10V).
If the driving voltage is over 10 V under normal conditions, please use the product for high gate to source cutoff voltage
(VGS(off)) which characteristics has been improved.
R07DS0079EJ0200 Rev.2.00
Apr 09, 2013
Page 1 of 6




RJK0851DPB pdf, 반도체, 판매, 대치품
RJK0851DPB
Static Drain to Source on State Resistance
vs. Temperature
50
Pulse Test
ID = 10 A
40
30 VGS = 4.5 V
20 10 V
10
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Dynamic Input Characteristics
200
ID = 20 A
160 VDD = 50 V
25 V
10 V
120
20
VGS
16
12
80
VDS
40
0
0 10
VDD = 50 V
25 V
10 V
20 30
40
Gate Charge Qg (nC)
8
4
0
50
Maximum Avalanche Energy vs.
Channel Temperature Derating
20
IAP = 10 A
VDD = 50 V
16 duty < 0.1 %
Rg 50 Ω
12
8
4
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Preliminary
10000
1000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
100
Crss
VGS = 0 V
f = 1 MHz
10
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
50
Pulse Test
40 10 V
30
5V
20
10 VGS = 0 V
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
R07DS0079EJ0200 Rev.2.00
Apr 09, 2013
Page 4 of 6

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RJK0851DPB 전자부품, 판매, 대치품
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RJK0851DPB

Silicon N Channel Power MOS FET

Renesas Technology
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