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부품번호 | L2SD2114KWLT3G 기능 |
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기능 | NPN silicon transistor | ||
제조업체 | Leshan Radio Company | ||
로고 | |||
Epitaxial planar type
LESHAN RADIO COMPANY, LTD.
NPN silicon transistor
L2SD2114KVLT1G Series
zFeatures
1) High DC current gain.
S-L2SD2114KVLT1G Series
hFE = 1200 (Typ.)
2) High emitter-base voltage.
VEBO =12V (Min.)
3
3) Low VCE (sat).
VCE (sat) = 0.18V (Typ.)
(IC / IB = 500mA / 20mA)
1
2
4) We declare that the material of product compliance with RoHS requirements.
5) S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
SOT– 23 (TO–236AB)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
VCBO
VCEO
VEBO
Collector current
IC
Collector power
dissipation
Junction temperature
Storage temperature
∗ Single pulse Pw=100ms
PC
Tj
Tstg
Limits
25
20
12
0.5
1
0.2
150
−55∼+150
Unit
V
V
V
A(DC)
A(Pulse) ∗
W
°C
°C
COLLECTOR
3
1
BASE
2
EMITTER
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
25
20
12
−
−
−
−
−
−
−
−
0.18
−
−
−
0.5
0.5
0.4
V IC=10µA
V IC=1mA
V IE=10µA
µA VCB=20V
µA VEB=10V
V IC/IB=500mA/20mA
DC current transfer ratio
Transition frequency
Output capacitance
Output On-resistance
∗ Measured using pulse current
hFE 820 − 2700 − VCE=3V, IC=10mA
fT∗ − 350 − MHz VCE=10V, IE=−50mA, f=100MHz
Cob − 8.0 − pF VCB=10V, IE=0A, f=1MHz
Ron − 0.8 − pF IB=1mA, Vi=100mV(rms), f=1kHz
ƽ hFE Values Classification, Device Marking and Ordering Information
Device
L2SD2114KVLT1G
S-L2SD2114KVLT1G
hFE
820~1800
Marking
BV
Shipping
3000/Tape&Reel
L2SD2114KVLT3G
S-L2SD2114KVLT3G
820~1800
BV 10000/Tape&Reel
L2SD2114KWLT1G
S-L2SD2114KWLT1G
L2SD2114KWLT3G
S-L2SD2114KWLT3G
1200~2700
1200~2700
BW 3000/Tape&Reel
BW 10000/Tape&Reel
Rev.O 1/4
LESHAN RADIO COMPANY, LTD.
L2SD2114KVLT1G Series
S-L2SD2114KVLT1G Series
A
L
3
BS
12
VG
C
D
H
K
0.037
0.95
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
INCHES
MILLIMETERS
MIN MAX MIN MAX
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
J K 0.0140 0.0285 0.35 0.69
L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
0.037
0.95
0.035
0.9
0.079
2.0
0.031
0.8
inches
mm
Rev.O 4/4
4페이지 | |||
구 성 | 총 4 페이지수 | ||
다운로드 | [ L2SD2114KWLT3G.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
L2SD2114KWLT3G | NPN silicon transistor | Leshan Radio Company |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |