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부품번호 | NP22N055IHE 기능 |
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기능 | MOS FIELD EFFECT TRANSISTOR | ||
제조업체 | Renesas | ||
로고 | |||
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP22N055HHE, NP22N055IHE, NP22N055SHE
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
These products are N-channel MOS Field Effect
Transistors designed for high current switching
applications.
FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on)1 = 39 mΩ MAX. (VGS = 10 V, ID = 11 A)
• Low Ciss : Ciss = 590 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP22N055HHE
NP22N055IHE Note
TO-251 (JEITA) / MP-3
TO-252 (JEITA) / MP-3Z
NP22N055SHE
TO-252 (JEDEC) / MP-3ZK
Note Not for new design.
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
55
Gate to Source Voltage
VGSS
±20
Drain Current (DC)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
±22
±55
Total Power Dissipation (TA = 25°C)
PT
1.2
Total Power Dissipation (TC = 25°C)
Single Avalanche Current Note2
Single Avalanche Energy Note2
PT
IAS
EAS
45
13 / 5
16 / 25
Channel Temperature
Tch 175
Storage Temperature
Tstg –55 to +175
V
V
A
A
W
W
A
mJ
°C
°C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, RG = 25 Ω , VGS = 20 → 0 V (See Figure 4.)
(TO-252)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
3.33 °C/W
125 °C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14135EJ4V0DS00 (4th edition)
Date Published July 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.
1999, 2005
NP22N055HHE, NP22N055IHE, NP22N055SHE
Figure6. FORWARD TRANSFER CHARACTERISTICS
100
Pulsed
10
1 TA = −40˚C
25˚C
75˚C
150˚C
0.1 175˚C
0.01
1.0
VDS = 10 V
2.0 3.0 4.0 5.0 6.0
VGS - Gate to Source Voltage - V
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
Pulsed
VDS = 10 V
10
TA = 175˚C
1 75˚C
25˚C
−40˚C
0.1
0.01
0.01
0.1 1 10
ID - Drain Current - A
100
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
80 Pulsed
70
60
50
40
VGS = 10 V
30
20
10
0
0.1 1 10 100
ID - Drain Current - A
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
60
Pulsed
50 VGS =10 V
40
30
20
10
0
0 12 34
VDS - Drain to Source Voltage - V
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
80
Pulsed
70
60
50
40
ID = 11 A
30
20
10
0
0
5
10 15
20
VGS - Gate to Source Voltage - V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = VGS
4.0 ID = 250 µA
3.0
2.0
1.0
0
−50 0 50 100 150
Tch - Channel Temperature - ˚C
4 Data Sheet D14135EJ4V0DS
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부품번호 | 상세설명 및 기능 | 제조사 |
NP22N055IHE | MOS FIELD EFFECT TRANSISTOR | Renesas |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |