|
|
|
부품번호 | L8550SLT1G 기능 |
|
|
기능 | General Purpose Transistors | ||
제조업체 | Leshan Radio Company | ||
로고 | |||
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L8550PLT1G
s-L8550PLT1G
85P
3000/Tape&Reel
L8550PLT3G
s-L8550PLT3G
85P
10000/Tape&Reel
L8550QLT1G
s-L8550QLT1G
1YD
3000/Tape&Reel
L8550QLT3G
L8550RLT1G
s-L8550QLT3G
s-L8550RLT1G
1YD
1YF
10000/Tape&Reel
3000/Tape&Reel
L8550RLT3G
s-L8550RLT3G
1YF
10000/Tape&Reel
L8550SLT1G
s-L8550SLT1G
1YH
3000/Tape&Reel
L8550SLT3G
s-L8550SLT3G
1YH
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base voltage
Emitter-base Voltage
Collector current-continuoun
Symbol
V CEO
V CBO
V EBO
IC
Value
-25
-40
-5
-800
Unit
V
V
V
mAdc
THERMALCHARACTERISTICS
Characteristic
Total Device Dissipation FR- 5 Board (1)
T A = 25 °C
Derate above 25 °C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T A = 25 °C
Derate above 25 °C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol Max
Unit
PD
225 mW
1.8 mW /°C
R θJA
556 °C/W
PD
300 mW
2.4 mW /°C
R θJA
417 °C/W
T J , T stg -55 to +150 °C
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
L8550PLT1G
Series
S-L8550PLT1G
Series
3
1
2
SOT– 23
COLLECTOR
3
1
BASE
2
EMITTER
Rev.O 1/4
SOT-23
LESHAN RADIO COMPANY, LTD.
L8550PLT1G
Series
S-L8550PLT1G
Series
A
L
3
BS
12
VG
C
D
H
K
0.037
0.95
0.035
0.9
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
DIM
INCHES
MILLIMETERS
MIN MAX MIN MAX
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0140 0.0285 0.35 0.69
J L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.079
2.0
0.031
0.8
inches
mm
Rev.O 4/4
4페이지 | |||
구 성 | 총 4 페이지수 | ||
다운로드 | [ L8550SLT1G.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
L8550SLT1G | General Purpose Transistors | Leshan Radio Company |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |