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Datasheet C2712 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | C2712 | NPN Transistor, 2SC2712
2SC2712
3 1 2
SOT-23
WEITRON
http://www.weitron.com.tw
2SC2712
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain (IC= 2 mAdc, VCE= 6.0 Vdc) Collector-Emitte |  Weitron Technology | data |
| 2 | C2712 | NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR
AM/FM IF AMPLIFIER,LOCAL OSCILATOR OF FM/VHF TUNER
High Current Gain Bandwidth Product fT=600MHz
2SC2715
SOT-23
1
1. 2.4 1.3
3
2 1.BASE 2.EMITTER 3.COLLECTOR
2.9 1.9 0.95 0.95 0.4
Unit:mm
ABSOLUTE MAXIMUM RATINGS
Characteristic Collector-Base Voltage Collector- |  WEJ | transistor |
C27 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | C2703 | NPN Transistor, 2SC2703 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC2703
Audio Power Amplifier Applications
2SC2703
Unit: mm
• High DC current gain: hFE = 100 to 320
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current  Toshiba data | | |
| 2 | C2705 | NPN Transistor, 2SC2705 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC2705
Audio Frequency Amplifier Applications
2SC2705
Unit: mm
• Small collector output capacitance: Cob = 1.8 pF (typ.) • High transition frequency: fT = 200 MHz (typ.) • Complementary to 2SA1145.
Absolute Maximum Ratings (Ta = 2  Toshiba Semiconductor data | | |
| 3 | C2710 | NPN Transistor, 2SC2710 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2710
2SC2710
For Audio Amplifier Applications
Unit: mm
· High DC current gain: hFE (1) = 100~320 · Complementary to 2SA1150
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-bas Toshiba data | | |
| 4 | C2712 | NPN Transistor, 2SC2712
2SC2712
3 1 2
SOT-23
WEITRON
http://www.weitron.com.tw
2SC2712
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain (IC= 2 mAdc, VCE= 6.0 Vdc) Collector-Emitte Weitron Technology data | | |
| 5 | C2712 | NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR
AM/FM IF AMPLIFIER,LOCAL OSCILATOR OF FM/VHF TUNER
High Current Gain Bandwidth Product fT=600MHz
2SC2715
SOT-23
1
1. 2.4 1.3
3
2 1.BASE 2.EMITTER 3.COLLECTOR
2.9 1.9 0.95 0.95 0.4
Unit:mm
ABSOLUTE MAXIMUM RATINGS
Characteristic Collector-Base Voltage Collector- WEJ transistor | | |
| 6 | C2713 | NPN Transistor, 2SC2713 2SC2713
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2713
Audio Frequency General Purpose Amplifier Applications
High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200~700 • Low noise: NF = 1dB (typ.), 10d Toshiba data | | |
| 7 | C2714 | NPN Transistor, 2SC2714 2SC2714
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)
2SC2714
High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications
Unit: mm
• Small reverse transfer capacitance: Cre = 0.7 pF (typ.) • Low noise figure: NF = 2.5dB (typ.)
Absolute Maximum Ratings (T Toshiba data | |
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