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부품번호 | SZNUD3124 기능 |
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기능 | Automotive Inductive Load Driver | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 10 페이지수
NUD3124, SZNUD3124
Automotive Inductive Load
Driver
This micro−integrated part provides a single component solution to
switch inductive loads such as relays, solenoids, and small DC motors
without the need of a free−wheeling diode. It accepts logic level
inputs, thus allowing it to be driven by a large variety of devices
including logic gates, inverters, and microcontrollers.
Features
• Provides Robust Interface between D.C. Relay Coils and Sensitive
Logic
• Capable of Driving Relay Coils Rated up to 150 mA at 12 Volts
• Replaces 3 or 4 Discrete Components for Lower Cost
• Internal Zener Eliminates Need for Free−Wheeling Diode
• Meets Load Dump and other Automotive Specs
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These are Pb−Free Devices
Typical Applications
• Automotive and Industrial Environment
• Drives Window, Latch, Door, and Antenna Relays
http://onsemi.com
MARKING DIAGRAMS
3
1
2
SOT−23
CASE 318
STYLE 21
JW6 MG
G
JW6 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
6
1
SC−74
CASE 318F
STYLE 7
JW6 MG
G
JW6 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
Benefits
• Reduced PCB Space
• Standardized Driver for Wide Range of Relays
• Simplifies Circuit Design and PCB Layout
• Compliance with Automotive Specifications
ORDERING INFORMATION
Device
Package Shipping†
NUD3124LT1G
SZNUD3124LT1G
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
3000 / Tape &
Reel
3000 / Tape &
Reel
Drain (3)
NUD3124DMT1G
SZNUD3124DMT1G
SC−74
(Pb−Free)
SC−74
(Pb−Free)
3000 / Tape &
Reel
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
INTERNAL CIRCUIT DIAGRAMS Brochure, BRD8011/D.
Drain (6)
Drain (3)
Gate (1)
10 k
100 K
Source (2)
CASE 318
Gate (2)
10 k
100 K
10 k
100 K
Source (1)
Source (4)
CASE 318F
Gate (5)
© Semiconductor Components Industries, LLC, 2012
February, 2012 − Rev. 12
1
Publication Order Number:
NUD3124/D
NUD3124, SZNUD3124
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Characteristic
OFF CHARACTERISTICS
Drain to Source Sustaining Voltage
(ID = 10 mA)
Drain to Source Leakage Current
(VDS = 12 V, VGS = 0 V)
(VDS = 12 V, VGS = 0 V, TJ = 125°C)
(VDS = 28 V, VGS = 0 V)
(VDS = 28 V, VGS = 0 V, TJ = 125°C)
Gate Body Leakage Current
(VGS = 3.0 V, VDS = 0 V)
(VGS = 3.0 V, VDS = 0 V, TJ = 125°C)
(VGS = 5.0 V, VDS = 0 V)
(VGS = 5.0 V, VDS = 0 V, TJ = 125°C)
ON CHARACTERISTICS
Gate Threshold Voltage
(VGS = VDS, ID = 1.0 mA)
(VGS = VDS, ID = 1.0 mA, TJ = 125°C)
Drain to Source On−Resistance
(ID = 150 mA, VGS = 3.0 V)
(ID = 150 mA, VGS = 3.0 V, TJ = 125°C)
(ID = 150 mA, VGS = 5.0 V)
(ID = 150 mA, VGS = 5.0 V, TJ = 125°C)
Output Continuous Current
(VDS = 0.25 V, VGS = 3.0 V)
(VDS = 0.25 V, VGS = 3.0 V, TJ = 125°C)
Forward Transconductance
(VDS = 12 V, ID = 150 mA)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 12 V, VGS = 0 V, f = 10 kHz)
Output Capacitance
(VDS = 12 V, VGS = 0 V, f = 10 kHz)
Transfer Capacitance
(VDS = 12 V, VGS = 0 V, f = 10 kHz)
SWITCHING CHARACTERISTICS
Propagation Delay Times:
High to Low Propagation Delay; Figure 1, (VDS = 12 V, VGS = 3.0 V)
Low to High Propagation Delay; Figure 1, (VDS = 12 V, VGS = 3.0 V)
High to Low Propagation Delay; Figure 1, (VDS = 12 V, VGS = 5.0 V)
Low to High Propagation Delay; Figure 1, (VDS = 12 V, VGS = 5.0 V)
Transition Times:
Fall Time; Figure 1, (VDS = 12 V, VGS = 3.0 V)
Rise Time; Figure 1, (VDS = 12 V, VGS = 3.0 V)
Fall Time; Figure 1, (VDS = 12 V, VGS = 5.0 V)
Rise Time; Figure 1, (VDS = 12 V, VGS = 5.0 V)
Symbol
VBRDSS
IDSS
IGSS
VGS(th)
RDS(on)
IDS(on)
gFS
Ciss
Coss
Crss
tPHL
tPLH
tPHL
tPLH
tf
tr
ttrf
Min
28
−
−
−
−
−
−
−
−
1.3
1.3
−
−
−
−
150
140
−
−
−
−
−
−
−
−
−
−
−
−
Typ
34
−
−
−
−
−
−
−
−
1.8
−
−
−
−
−
200
−
500
32
21
8.0
890
912
324
1280
2086
708
556
725
Max Unit
38 V
mA
0.5
1.0
50
80
mA
60
80
90
110
V
2.0
2.0
W
1.4
1.7
0.8
1.1
mA
−
−
− mmho
− pf
− pf
− pf
ns
−
−
−
−
ns
−
−
−
−
http://onsemi.com
4
4페이지 NUD3124, SZNUD3124
1800
1600
1400
ID = 0.25 A
VGS = 3.0 V
1200
1000
ID = 0.15 A
VGS = 3.0 V
800
600
ID = 0.15 A
VGS = 5.0 V
400
−50 −25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. On Resistance Variation versus
Junction Temperature
0.20
0.18
ID = 250 mA
0.16
0.14
0.12
0.10 125 °C
85 °C 25 °C −40 °C
0.08
0.06
0.04
0.02
0.00
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 11. On Resistance Variation versus
Gate−to−Source Voltage
36.0
35.5
35.0
34.5 −40 °C
34.0
25 °C
85 °C
33.5
33.0 125 °C
32.5
32.0
0.1 1.0 10 100 1000
IZ, ZENER CURRENT (mA)
Figure 12. Zener Clamp Voltage versus Zener
Current
1.0
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
Pd(pk)
PW t1
t2
PERIOD
DUTY CYCLE = t1/t2
0.001
0.01
0.1
1.0
10
100
1000
10,000
100,000
t1, PULSE WIDTH (ms)
Figure 13. Transient Thermal Response for NUD3124LT1G
1,000,000
http://onsemi.com
7
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부품번호 | 상세설명 및 기능 | 제조사 |
SZNUD3124 | Automotive Inductive Load Driver | ON Semiconductor |
SZNUD3124DMT1G | Automotive Inductive Load Driver | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |