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PDF FGB20N60SFD_F085 Data sheet ( Hoja de datos )
| Número de pieza | FGB20N60SFD_F085 | |
| Descripción | 20A Field Stop IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FGB20N60SFD_F085
600V, 20A Field Stop IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) = 2.2V @ IC = 20A
• High input impedance
• Fast switching
• Qualified to Automotive Requirements of AEC-Q101
• RoHS complaint
Applications
• Inverters, SMPS, PFC, UPS
• Automotive Chargers, Converters, High Voltage
Auxiliaries
C
October 2013
General Description
Using novel field-stop IGBT technology, Fairchild’s new series
of field-stop IGBTs offers the optimum performance for
automotive chargers, inverters, and other applications where
low conduction and switching losses are essential.
C
D2-PAK
GE
Absolute Maximum Ratings
Symbol
Description
VCES
VGES
IC
ICM (1)
IF
IFM(1)
PD
TJ
Tstg
TL
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
@ TC = 25oC
@ TC = 100oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RθJC(IGBT) ( 2)
RθJC(Diode)
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Symbol
Parameter
RθJA
Thermal Resistance, Junction to Ambient (PCB Mount)(2)
©2013 Fairchild Semiconductor Corporation
FGB20N60SFD_F085 Rev. C1
1
G
E
Ratings
600
± 20
40
20
60
20
10
60
208
83
-55 to +150
-55 to +150
300
Ratings
0.6
2.6
Typ.
75
Units
V
V
A
A
A
A
A
A
W
W
oC
oC
oC
Units
oC/W
oC/W
Units
oC/W
www.fairchildsemi.com
1 page  
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20 Common Emitter
TC = 25oC
16
12
8
IC = 10A
40A
4
20A
0 0 4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
Figure 9. Capacitance Characteristics
2500
2000
Common Emitter
VGE = 0V, f = 1MHz
Cies TC = 25oC
1500
1000
C oes
500
Cres
0
0.1 1
10
Collector-Emitter Voltage, VCE [V]
Figure 11. SOA Characteristics
30
100
10μs
100μs
10 1ms
10 ms
1 DC
0.1 *Notes:
1. TC = 25oC
0.01
1
2. TJ = 150oC
3. Single Pulse
10
100
Collector-Emitter Voltage, VCE [V]
1000
Figure 8. Saturation Voltage vs. VGE
20
Common Emitter
TC = 125oC
16
12
8
IC = 10A
40A
4
20A
0
0 4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
Figure 10. Gate charge Characteristics
15
Common Emitter
TC = 25oC
12
VCC = 100V
300V
9 200V
6
3
0
0 20 40 60 80
Gate Charge, Qg [nC]
Figure 12. Turn-on Characteristics vs.
Gate Resistance
100
Common Emitter
VCC = 600V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC
tr
td(on)
10
0 10 20 30 40 50
Gate Resistance, RG [Ω]
©2013 Fairchild Semiconductor Corporation
FGB20N60SFD_F085 Rev. C1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FGB20N60SFD_F085.PDF ] | |
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