9D0N90NA Datasheet PDF - KEC
| Part Number | 9D0N90NA | |
| Description | KHB9D0N90NA | |
| Manufacturers | KEC | |
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SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
VDSS(Min.)= 900V, ID= 9A
Drain-Source ON Resistance :
RDS(ON)=1.05(Typ.) @VGS =10V
Qg(typ.) =54nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
Drain Current
@TC=25
Pulsed
(Note1)
Single Pulsed Avalanche Energy (Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above25
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
SYMBOL RATING
VDSS
900
VGSS
ID
IDP
EAS
30
9.0
36
900
EAR 20.5
dv/dt
4.5
280
PD
2.22
Tj 150
Tstg -55 150
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
RthJC
RthCS
RthJA
0.45
0.24
40
/W
/W
/W
D
G
Marking
1 KHB
9D0N90N
A 725
2
KHB9D0N90NA
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
A
N
O
D
E
d
PP
123
Q
1. Gate
2. Drain
3. Source
B
K
DIM MILLIMETERS
A 15.60 +_ 0.20
B 4.80 +_ 0.20
C 19.90 +_ 0.20
D 2.00 +_ 0.20
d 1.00 +_ 0.20
E 3.00 +_ 0.20
F 3.80 +_ 0.20
G 3.50 +_ 0.20
H 13.90 +_ 0.20
I 12.76 +_ 0.20
J 23.40 +_ 0.20
M K 1.5+0.15-0.05
L 16.50 +_ 0.30
M 1.40 +_ 0.20
T N 13.60 +_ 0.20
O 9.60 +_ 0.20
P 5.45 +_ 0.30
Q 3.20 +_ 0.10
R 18.70 +_ 0.20
T 0.60+0.15-0.05
TO-3P(N)-E
S
1 PRODUCT NAME
2 LOT NO
2008. 4. 17
Revision No : 3
1/6
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KHB9D0N90NA
2008. 4. 17
Revision No : 3
5/6
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 9D0N90NA electronic component. |
| Information | Total 6 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ 9D0N90NA.PDF Datasheet ] | |
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