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PDF LDTC143TET1G Data sheet ( Hoja de datos )
| Número de pieza | LDTC143TET1G | |
| Descripción | Bias Resistor Transistors | |
| Fabricantes | LRC | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistors LDTC114EET1G Series
NPN Silicon Surface Mount Transistors S-LDTC114EET1G Series
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by integrating
them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SC-89 package
which is designed for low power surface mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SC-89 package can be soldered using wave or reflow. The
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
• We declare that the material of product compliance with
RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
SC-89
PIN 1
BASE
(INPUT)
R1
R2
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol Value
Collector-Base Voltage
VCBO
50
Collector-Emitter Voltage
VCEO
50
Collector Current
IC 100
THERMAL CHARACTERISTICS
Unit
Vdc
Vdc
mAdc
Rating
Total Device Dissipation,
FR−4 Board (Note 1) @ TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
Total Device Dissipation,
FR−4 Board (Note 2) @ TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
Junction and Storage Temperature
Range
Symbol
PD
RqJA
Value
200
1.6
600
Unit
mW
mW/°C
°C/W
PD
RqJA
300 mW
2.4 mW/°C
400 °C/W
TJ, Tstg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 × 1.0 Inch Pad
Rev.B 1/9
1 page  
LESHAN RADIO COMPANY, LTD.
LDTC114EET1G Series,S-LDTC114EET1G Series
TYPICAL ELECTRICAL CHARACTERISTICS − LDTC114EET1G
100
Vo=0.2V
10
1
0 10 20 30 40
IC, COLLECTOR CURRENT (mA)
-55℃
-2C5O℃LLECTOR 2C5U℃RRENT:Ic7(5m℃A)
50
125℃
Fig. 5 INPUT VOLTAGE VS OUTPUT CURRENT
Rev.B 5/9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet LDTC143TET1G.PDF ] | |
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