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PDF LDTC144GET3G Data sheet ( Hoja de datos )

Número de pieza LDTC144GET3G
Descripción Bias Resistor Transistor
Fabricantes LRC 
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No Preview Available ! LDTC144GET3G Hoja de datos, Descripción, Manual

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTC144GET1G
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector DTC144GE
Power
DTC144GUA / DTC144GKA
dissipation DTC144GSA
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Pc
Tj
Tstg
Limits
50
50
5
100
150
200
300
150
55 to +150
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTC144GET1G
L1
_ 47 3000/Tape & Reel
LDTC144GET3G
L1
_ 47 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Emitter-base resistance
Transition frequency
Transition frequency of the device.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R
fT
Min.
50
50
5
65
68
32.9
Typ.
47
250
Max.
0.5
130
0.3
61.1
3
1
2
SC-89
1
BASE
R1
R2
Unit
V
V
V
mA
mW
C
C
3
COLLECTOR
2
EMITTER
Unit
V
V
V
µA
µA
V
k
MHz
Conditions
IC=50µA
IC=1mA
IE=160µA
VCB=50V
VEB=4V
IC=10mA , IB=0.5mA
IC=5mA , VCE=5V
VCE=10V , IE= −5mA , f=100MHz
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