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Número de pieza | IRL3715ZLPbF | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRL3715ZLPbF (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l Lead-Free
PD - 95581
IRL3715ZPbF
IRL3715ZSPbF
IRL3715ZLPbF
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
:20V 11m
7.0nC
Benefits
l Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRL3715Z
D2Pak
IRL3715ZS
TO-262
IRL3715ZL
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
fMounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
RθJA
Junction-to-Case
fCase-to-Sink, Flat Greased Surface
fÃJunction-to-Ambient
gJunction-to-Ambient (PCB Mount)
Notes through are on page 12
www.irf.com
Max.
20
± 20
50 h
36 h
200
45
23
0.30
-55 to + 175
300 (1.6mm from case)
y y10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
3.33
–––
62
40
Units
V
A
W
W/°C
°C
Units
°C/W
1
07/20/04
1 page IRL3715Z/S/LPbF
60
LIMITED BY PACKAGE
50
40
30
20
10
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 9. Maximum Drain Current vs.
Case Temperature
2.6
2.2
1.8
ID = 250µA
1.4
1.0
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
10
D = 0.50
1
0.20
0.10
0.05
0.1 0.02
0.01
0.01 SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
Ci= τi/Ri
Ci= τi/Ri
R2R2
τ2 τ2
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
R3R3 Ri (°C/W) τi (sec)
τCτ 0.942 0.000145
τ3τ3 0.982 0.000805
0.406 0.004757
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
5 Page TO-262 Package Outline
Dimensions are shown in millimeters (inches)
IRL3715Z/S/LPbF
TO-262 Part Marking Information
E XAMPLE : T HIS IS AN IRL3103L
LOT CODE 1789
AS S EMB LE D ON WW 19, 1997
IN THE AS S EMB LY LINE "C"
Note: "P" in as sembly line
pos ition indicates "Lead-Free"
INT E RNATIONAL
RE CT IF IER
LOGO
AS S EMBLY
LOT CODE
OR
INT ERNAT IONAL
RECT IFIE R
LOGO
AS S E MB LY
LOT CODE
www.irf.com
PART NUMB ER
DATE CODE
YE AR 7 = 1997
WE E K 19
LINE C
PART NUMBE R
DAT E CODE
P = DE S IGNAT E S LEAD-FREE
PRODUCT (OPT IONAL)
YE AR 7 = 1997
WE EK 19
A = AS S EMB LY S IT E CODE
11
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet IRL3715ZLPbF.PDF ] |
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IRL3715ZLPbF | Power MOSFET ( Transistor ) | International Rectifier |
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