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부품번호 | FDS6673BZ_F085 기능 |
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기능 | P-Channel PowerTrench MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 6 페이지수
PFD-CSh6a6n7n3eBlZP_oFw08e5rTrench® MOSFET
-30V, -14.5A, 7.8mΩ
July 2009
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench process that
has been especially tailored to minimize the on-state
resistance.
This device is well suited for Power Management and
load switching applications common in Notebook
Computers and Portable Battery Packs.
Features
Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A
Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A
Extended VGS range (-25V) for battery applications
HBM ESD protection level of 6.5kV typical (note 3)
High performance trench technology for extremely low
rDS(on)
High power and current handling capability
RoHS compliant
Qualified to AEC Q101
DD
D
D
SO-8
S SSG
5
6
7
8
4
3
2
1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID
Drain Current -Continuous
-Pulsed
(Note1a)
Power Dissipation for Single Operation
(Note1a)
PD (Note1b)
(Note1c)
TJ, TSTG
Operating and Storage Temperature
Ratings
-30
±25
-14.5
-75
2.5
1.2
1.0
-55 to 150
Units
V
V
A
A
W
°C
Thermal Characteristics
RθJA
RθJC
Thermal Resistance , Junction to Ambient (Note 1a)
Thermal Resistance , Junction to Case (Note 1)
50 °C/W
25 °C/W
Package Marking and Ordering Information
Device Marking
FDS6673BZ
Device
FDS6673BZ _F085
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
©2009 Fairchild Semiconductor Corporation
FDS6673BZ_F085 Rev. A
1
www.fairchildsemi.com
Typical Characteristics TJ = 25°C unless otherwise noted
10
8
6 VDD = -10V VDD = -15V
VDD = -20V
4
6000
1000
Ciss
Coss
Crss
2
0
0 20 40 60 80 100
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
f = 1MHz
VGS = 0V
100
0.1
1 10 30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain to Source Voltage
1000
100
10
1
0.1
0.01
1E-3
1E-4
0
TJ = 150oC
TJ = 25oC
5 10 15 20 25 30 35
-VGS(V)
Figure 9. Ig vs VGS
40
10
TJ = 125oC
TJ = 25oC
1
10-2
10-1 100 101 102
tAV, TIME IN AVALANCHE(ms)
103
Figure 10. Unclamped Inductive Switching
Capability
16
12
VGS = -10V
8 VGS = -4.5V
4
0
25 50 75 100 125 150
TA, AMBIENT TEMPERATURE(oC)
Figure 11. Maximum Continuous Drain Current vs
Ambient Temperature
100
100μs
10 1ms
1 THIS AREA IS
LIMITED BY rDS(on)
10 ms
100 ms
0.1
0.01
0.01
SINGLE PULSE
TJ = MAX RATED
RθJA = 125oC/W
TC = 25oC
1s
10s
DC
0.1 1 10 100
-VDS, DRAIN to SOURCE VOLTAGE (V)
500
Figure 12. Forward Bias Safe Operating Area
FDS6673BZ_F085 Rev. A
4
www.fairchildsemi.com
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부품번호 | 상세설명 및 기능 | 제조사 |
FDS6673BZ_F085 | P-Channel PowerTrench MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |