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RJJ0315DPA 데이터시트 PDF




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부품번호 RJJ0315DPA 기능
기능 P Channel Power MOS FET
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RJJ0315DPA 데이터시트, 핀배열, 회로
RJJ0315DPA
-30V, -35A, 5.9mmax.
P Channel Power MOS FET
High Speed Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
Pb-free
Halogen-free
Outline
RENESAS Package code: PWSN0008DE-A
(Package name: WPAK(3F))
5678
4321
4
G
5 678
D DDD
Datasheet
R07DS0388EJ0400
Rev.4.00
Mar 22, 2013
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10s, duty cycle 1 %
2. Tc = 25°C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
Pch Note2
Tch
Tstg
Ratings
–30
-20/+10
–35
–140
–35
30
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
R07DS0388EJ0400 Rev.4.00
Mar 22, 2013
Page 1 of 6




RJJ0315DPA pdf, 반도체, 판매, 대치품
RJJ0315DPA
Static Drain to Source On State Resistance
vs. Temperature
20
Pulse Test
16
12 ID = -5 A, -10A, -20 A
8 VGS = -4.5 V
4
-10 V
-5 A, -10A, -20 A
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Dynamic Input Characteristics
00
VDD = -25 V
-10 V
-10 -5 V -4
-20 -8
-30 VDS
VDD = -25 V
-10 V
-40 -5 V
-12
VGS -16
-50 ID = -35 A
-20
0 40 80 120 160 200
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
1000
100
Tc = -25°C
10
25°C
75°C
1
VDS = -10 V
Pulse Test
0.1
-0.1 -0.3 -1 -3 -10 -30 -100
Drain Current ID (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
300
Ciss
Coss
Crss
100
30 VGS = 0
f = 1 MHz
10
0 -10 -20 -30
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
-50
-10 V
-40 -5 V
Pulse Test
-30
-20
-10 VGS = 0, 5 V
0 -0.4 -0.8 -1.2 -1.6 -2.0
R07DS0388EJ0400 Rev.4.00
Mar 22, 2013
Page 4 of 6

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RJJ0315DPA 전자부품, 판매, 대치품
Notice
1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
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RJJ0315DPA

P Channel Power MOS FET

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