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LDTA123EET1G 데이터시트 PDF




LRC에서 제조한 전자 부품 LDTA123EET1G은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 LDTA123EET1G 기능
기능 Bias Resistor Transistor
제조업체 LRC
로고 LRC 로고


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LDTA123EET1G 데이터시트, 핀배열, 회로
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistors LDTA114EET1G Series
PNP Silicon Surface Mount Transistors S-LDTA114EET1G Series
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by integrating
them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SC-89 package
which is designed for low power surface mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SC-89 package can be soldered using wave or reflow. The
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
We declare that the material of product compliance with
RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
Rating
VCBO
VCEO
IC
50 Vdc
50 Vdc
100 mAdc
Symbol Value Unit
Total Device Dissipation, FR−4 Board
(Note 1) @ TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
(Note 1)
PD
RqJA
200 mW
1.6 mW/°C
600 °C/W
Total Device Dissipation, FR−4 Board
(Note 2) @ TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
(Note 2)
PD
RqJA
300 mW
2.4 mW/°C
400 °C/W
Junction and Storage Temperature Range
TJ, Tstg −55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 × 1.0 Inch Pad.
SC-89
PIN 1
BASE
(INPUT)
R1
R2
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
Rev.B 1/6




LDTA123EET1G pdf, 반도체, 판매, 대치품
LESHAN RADIO COMPANY, LTD.
LDTA114EET1G Series,S-LDTA114EET1G Series
TYPICAL ELECTRICAL CHARACTERISTICS − LDTA114EET1G
1 1000
IC/IB=10
VCE=10V
100
0.1
10
0.01
0
10 20 30 40 50 60
IC, COLLECTOR CURRENT (mA)
-55℃
25℃
75℃
100℃
125℃
Fig. 1 VCE(sat) VS IC
3.5
f = 1 MHz
3 IE = 0 A
2.5
2
1.5
1
0.5
0
0 10 20 30 40 50
VR, REVERSE BIAS VOLTAGE (V)
Fig. 3 OUTPUT CAPACITANCE
60
1
0
100
20 40 60 80 100 120
IC, COLLECTOR CURRENT (mA)
-55℃
25℃
75℃
100℃
125℃
Fig. 2 DC CURRENT GAIN
Vo=5V
10
1
0.1
0.01
0.001
0 0.5 1 1.5 2 2.5 3 3.5
-55℃
Vin, INPUT VOLTAGE (V)
-25℃
25℃
75℃
125℃
Fig. 3 OUTPUT CURRENT VS INPUT VOLTAGE
Rev.B 4/ 6

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관련 데이터시트

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LDTA123EET1

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LDTA123EET1G

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