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부품번호 | IRFZ34NSPBF 기능 |
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기능 | Power MOSFET ( Transistor ) | ||
제조업체 | International Rectifier | ||
로고 | |||
전체 10 페이지수
l Advanced Process Technology
l Surface Mount (IRFZ34NS)
l Low-profile through-hole (IRFZ34NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ34NL) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
www.irf.com
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount) **
PD - 95571
IRFZ34NSPbF
IRFZ34NLPbF
HEXFET® Power MOSFET
D VDSS = 55V
RDS(on) = 0.040Ω
ID = 29A
S
D 2 Pak
TO-262
Max.
29
20
100
3.8
68
0.45
± 20
130
16
5.6
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Typ.
Max.
2.2
40
Units
°C/W
1
07/19/04
IRFZ34NS/LPbF
1200
1000
800
600
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Ciss Coss = Cds + Cgd
Coss
400
Crss
200
0A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 16A
16
VDS = 44V
VDS = 28V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0A
0 10 20 30 40
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 175°C
TJ = 25°C
10
1 VGS = 0V A
0.4 0.8 1.2 1.6 2.0
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
10µs
100µs
10
1ms
TC = 25°C
TJ = 175°C
Single Pulse
1
1
10
10ms
A
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
4페이지 IRFZ34NS/LPbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
-
RG
+ Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
+
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
- VDD
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
VGS=10V *
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
www.irf.com
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
VDD
ISD
7
7페이지 | |||
구 성 | 총 10 페이지수 | ||
다운로드 | [ IRFZ34NSPBF.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
IRFZ34NSPBF | Power MOSFET ( Transistor ) | International Rectifier |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |