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AUIRLR014N 데이터시트 PDF




International Rectifier에서 제조한 전자 부품 AUIRLR014N은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 AUIRLR014N 자료 제공

부품번호 AUIRLR014N 기능
기능 HEXFET Power MOSFET
제조업체 International Rectifier
로고 International Rectifier 로고


AUIRLR014N 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




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AUIRLR014N 데이터시트, 핀배열, 회로
AUTOMOTIVEGRADE
PD - 97740
• Advanced Planar Technology
• Logic-Level Gate Drive
• Low On-Resistance
• Dynamic dV/dT Rating
• 175°C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Repetitive Avalanche Allowed up to Tjmax
• Lead-Free, RoHS Compliant
• Automotive Qualified*
G
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit com-
bined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are
well known for, provides the designer with an ex-
tremely efficient and reliable device for use in Auto-
motive and a wide variety of other applications.
AUIRLR014N
HEXFET® Power MOSFET
D V(BR)DSS
RDS(on) max.
S ID
55V
0.14
10A
G
Gate
D
S
G
D-Pak
AUIRLR014N
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
™IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
ÙAvalanche Current
™Repetitive Avalanche Energy
ePeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
gRJC
Junction-to-Case
hRJA Junction-to-Ambient (PCB mount)
RJA Junction-to-Ambient
10
7.1
40
28
0.2
± 16
35
6.0
2.8
5.0
-55 to + 175
300
Typ.
–––
–––
–––
Max.
5.3
50
110
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
11/10/11




AUIRLR014N pdf, 반도체, 판매, 대치품
AUIRLR014N
100
10
VGVSGS
TOPTOP 15V15V
12V10V
10V5.0V
BOBTOTTOTMOM75422.....0057024332VVVVV.....55507VVVVV
100
10
VVGGSS
TTOOPP 151V5V
121V0V
150.V0V
74.0.5VV
53.0.5VV
BBOOTTTTOOMM422232...570...507VVVVVV
1
0.1
0.1
2.5V
20μs PULSE WIDTH
TJ = 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
1 2.5V
0.1
0.1
20μs PULSE WIDTH
TJ= 175 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
TJ = 25° C
TJ = 175° C
10
1
0.1
2.0
V DS= 50V
20μs PULSE WIDTH
4.0 6.0 8.0
VGS, Gate-to-Source Voltage (V)
10.0
Fig 3. Typical Transfer Characteristics
4
2.5 ID = 10A
2.0
1.5
1.0
0.5
0.0 VGS = 10V
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com

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AUIRLR014N 전자부품, 판매, 대치품
AUIRLR014N
15V
VDS
L
RG
20V
10V tp
D.U.T
IAS
0.01
DRIVER
+
-
VDD A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
60 ID
TOP
2.4A
50 5.0A
BOTTOM 6.0A
40
30
20
10
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
www.irf.com
Current Regulator
Same Type as D.U.T.
50K
12V .2F
.3F
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7

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관련 데이터시트

부품번호상세설명 및 기능제조사
AUIRLR014N

Power MOSFET ( Transistor )

Infineon
Infineon
AUIRLR014N

HEXFET Power MOSFET

International Rectifier
International Rectifier

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