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부품번호 | AUIRLR014N 기능 |
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기능 | HEXFET Power MOSFET | ||
제조업체 | International Rectifier | ||
로고 | |||
전체 12 페이지수
AUTOMOTIVEGRADE
PD - 97740
• Advanced Planar Technology
• Logic-Level Gate Drive
• Low On-Resistance
• Dynamic dV/dT Rating
• 175°C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Repetitive Avalanche Allowed up to Tjmax
• Lead-Free, RoHS Compliant
• Automotive Qualified*
G
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit com-
bined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are
well known for, provides the designer with an ex-
tremely efficient and reliable device for use in Auto-
motive and a wide variety of other applications.
AUIRLR014N
HEXFET® Power MOSFET
D V(BR)DSS
RDS(on) max.
S ID
55V
0.14
10A
G
Gate
D
S
G
D-Pak
AUIRLR014N
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
ÃAvalanche Current
Repetitive Avalanche Energy
ePeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
gRJC
Junction-to-Case
hRJA Junction-to-Ambient (PCB mount)
RJA Junction-to-Ambient
10
7.1
40
28
0.2
± 16
35
6.0
2.8
5.0
-55 to + 175
300
Typ.
–––
–––
–––
Max.
5.3
50
110
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
11/10/11
AUIRLR014N
100
10
VGVSGS
TOPTOP 15V15V
12V10V
10V5.0V
BOBTOTTOTMOM75422.....0057024332VVVVV.....55507VVVVV
100
10
VVGGSS
TTOOPP 151V5V
121V0V
150.V0V
74.0.5VV
53.0.5VV
BBOOTTTTOOMM422232...570...507VVVVVV
1
0.1
0.1
2.5V
20μs PULSE WIDTH
TJ = 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
1 2.5V
0.1
0.1
20μs PULSE WIDTH
TJ= 175 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
TJ = 25° C
TJ = 175° C
10
1
0.1
2.0
V DS= 50V
20μs PULSE WIDTH
4.0 6.0 8.0
VGS, Gate-to-Source Voltage (V)
10.0
Fig 3. Typical Transfer Characteristics
4
2.5 ID = 10A
2.0
1.5
1.0
0.5
0.0 VGS = 10V
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com
4페이지 AUIRLR014N
15V
VDS
L
RG
20V
10V tp
D.U.T
IAS
0.01
DRIVER
+
-
VDD A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
60 ID
TOP
2.4A
50 5.0A
BOTTOM 6.0A
40
30
20
10
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
www.irf.com
Current Regulator
Same Type as D.U.T.
50K
12V .2F
.3F
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
7페이지 | |||
구 성 | 총 12 페이지수 | ||
다운로드 | [ AUIRLR014N.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
AUIRLR014N | Power MOSFET ( Transistor ) | Infineon |
AUIRLR014N | HEXFET Power MOSFET | International Rectifier |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |