Datasheet.kr   

AUIRLR2908 데이터시트 PDF




International Rectifier에서 제조한 전자 부품 AUIRLR2908은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 AUIRLR2908 자료 제공

부품번호 AUIRLR2908 기능
기능 HEXFET Power MOSFET
제조업체 International Rectifier
로고 International Rectifier 로고


AUIRLR2908 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 13 페이지수

미리보기를 사용할 수 없습니다

AUIRLR2908 데이터시트, 핀배열, 회로
AUTOMOTIVE GRADE
PD - 97734
AUIRLR2908
Features
l Advanced Planar Technology
l Logic-Level Gate Drive
l Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed
up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
G
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
HEXFET® Power MOSFET
D V(BR)DSS
80V
RDS(on) typ.
22.5m
max
ID (Silicon Limited)
k28m
39A
S ID (Package Limited)
30A
G
Gate
D
S
G
D-Pak
AUIRLR2908
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
Max.
39k
Units
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
28 A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
cIDM Pulsed Drain Current
30
150
PD @TC = 25°C Power Dissipation
Linear Derating Factor
120
0.77
W
W/°C
VGS
EAS
EAS (tested )
IAR
EAR
dv/dt
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
iSingle Pulse Avalanche Energy Tested Value
cAvalanche Current
hRepetitive Avalanche Energy
ePeak Diode Recovery dv/dt
± 16
180
250
See Fig. 12a, 12b, 15, 16
2.3
V
mJ
A
mJ
V/ns
TJ Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
300
°C
Parameter
lRJC
Junction-to-Case
jRJA Junction-to-Ambient (PCB Mount)
Typ.
–––
–––
Max.
1.3
40
Units
°C/W
RJA Junction-to-Ambient
––– 110
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
10/17/11




AUIRLR2908 pdf, 반도체, 판매, 대치품
AUIRLR2908
1000
100
10
TOP
BOTTOM
VGS
15V
10V
4.5V
4.0V
3.5V
3.0V
2.7V
2.5V
1
2.5V
0.1
0.01
0.01
20μs PULSE WIDTH
Tj = 25°C
0.1 1 10
VDS, Drain-to-Source Voltage (V)
100
1000
100
TOP
BOTTOM
VGS
15V
10V
4.5V
4.0V
3.5V
3.0V
2.7V
2.5V
10
2.5V
1
0.1
0.01
20μs PULSE WIDTH
Tj = 175°C
0.1 1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
TJ = 175°C
10 TJ = 25°C
VDS = 25V
20μs PULSE WIDTH
1
2345
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
60
TJ = 25°C
50
40
30 TJ = 175°C
20
10
0
0
VDS = 10V
20μs PULSE WIDTH
10 20 30 40 50 60
ID, Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
vs. Drain Current
www.irf.com

4페이지










AUIRLR2908 전자부품, 판매, 대치품
AUIRLR2908
VDS
L
RG
20V
VGS tp
D.U.T
IAS
0.01
15V
DRIVER
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50K
12V .2F
.3F
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com
400
ID
TOP 9.3A
16A
300 BOTTOM 23A
200
100
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
2.5
2.0
1.5
ID = 250μA
1.0
0.5
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 14. Threshold Voltage vs. Temperature
7

7페이지


구       성 총 13 페이지수
다운로드[ AUIRLR2908.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
AUIRLR2905

Power MOSFET ( Transistor )

Infineon
Infineon
AUIRLR2905

HEXFET Power MOSFET

International Rectifier
International Rectifier

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵