|
|
PDF LDTB143TKT1G Data sheet ( Hoja de datos )
| Número de pieza | LDTB143TKT1G | |
| Descripción | Bias Resistor Transistor | |
| Fabricantes | LRC | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de LDTB143TKT1G (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
|
No Preview Available !
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTB143TKT1G
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on / off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
−50
−40
−5
−500
200
150
−55 to +150
Unit
V
V
V
mA
mW
C
C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTB143TKT1G
K2
4.7
3000/Tape & Reel
LDTB143TKT3G
K2
4.7
10000/Tape & Reel
3
1
2
SC-89
1
BASE
R1
3
COLLECTOR
2
EMITTER
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO −50 − − V IC= −50µA
Collector-emitter breakdown voltage BVCEO −40 − − V IC= −1mA
Emitter-base breakdown voltage
BVEBO −5 − − V IE= −50µA
Collector cutoff current
ICBO − − −0.5 µA VCB= −50V
Emitter cutoff current
IEBO − − −0.5 µA VEB= −4V
Collector-emitter saturation voltage VCE(sat) − − −0.3 V IC/IB= −50mA/−2.5mA
DC current transfer ratio
hFE 100 250 600 − VCE= −5V, IC= −50mA
Input resistance
R1 3.29 4.7 6.11 kΩ
−
Transition frequency
∗ Characteristics of built-in transistor
fT ∗ − 200 − MHz VCE= −10V, IE=50mA, f=100MHz
1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet LDTB143TKT1G.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| LDTB143TKT1G | Bias Resistor Transistor | LRC |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |