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Datasheet K2354 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | K2354 | N-Channel MOSFET, 2SK2354 DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2353/2SK2354
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION The 2SK2353/2SK2354 is N-Channel MOS Field Effect Transis-
tor designed for high voltage switching applications.
FEATURES • Low On-Resistance
2SK2353: RDS(on) = 1.4 Ω (VGS = 10 V, |  NEC | data |
K23 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | K2312 | N-Channel MOSFET, 2SK2312 2SK2312
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV)
2
2SK2312
Chopper Regulator, DC−DC Converter and Motor Drive Applications
z 4-V gate drive z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON)  Toshiba Semiconductor data | | |
| 2 | K2313 | N-Channel MOSFET, 2SK2313 2SK2313
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)
2SK2313
Chopper Regulator, DC−DC Converter and Motor Drive Applications
Unit: mm
z 4-V gate drive
z Low drain−source ON resistance : RDS (ON) = 8 mΩ (typ.)
z High forward transfer admittance : |Yfs| = 60 S Toshiba Semiconductor data | | |
| 3 | K2313 | N-Channel MOSFET, 2SK2313 2SK2313
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)
2SK2313
Chopper Regulator, DC−DC Converter and Motor Drive Applications
Unit: mm
z 4-V gate drive
z Low drain−source ON resistance : RDS (ON) = 8 mΩ (typ.)
z High forward transfer admittance : |Yfs| = 60 S Toshiba Semiconductor data | | |
| 4 | K2324 | N-Channel MOSFET, 2SK2324 Power F-MOS FETs
2SK758
2SK2324(Tentative)
Silicon N-Channel Power F-MOS
s Features
q Avalanche Unit : mm
4.6±0.2 ø3.2±0.1 9.9±0.3 2.9±0.2
energy capability guaranteed switching
q High-speed q Low q No
ON-resistance
15.0±0.3 4.1±0.2 8.0±0.2 Solder Dip 3.0±0.2
secondary breakdown
s Ap  Panasonic data | | |
| 5 | K2325TJ600 | Medium Voltage Thyristor Date:- 18th January, 2016 Data Sheet Issue:- P1
Medium Voltage Thyristor Types K2325TJ600 & K2325TJ650
Absolute Maximum Ratings
VDRM VDSM VRRM VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (note 1) Repetitive peak reverse voltage, (note 1  IXYS thyristor | | |
| 6 | K2325TJ650 | Medium Voltage Thyristor Date:- 18th January, 2016 Data Sheet Issue:- P1
Medium Voltage Thyristor Types K2325TJ600 & K2325TJ650
Absolute Maximum Ratings
VDRM VDSM VRRM VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (note 1) Repetitive peak reverse voltage, (note 1 IXYS thyristor | | |
| 7 | K2333 | N-Channel MOSFET, 2SK2333 SHINDENGEN
HVX-2 Series Power MOSFET
N-Channel Enhancement type
( F6F70HVX2 )
700V 6A
FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed. APPLICAT  Shindengen data | |
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