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부품번호 | FQPF32N20C 기능 |
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기능 | N-Channel QFET MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 10 페이지수
FQP32N20C / FQPF32N20C
N-Channel QFET® MOSFET
200 V, 28 A, 82 mΩ
November 2013
Features
• 28 A, 200 V, RDS(on) = 82 mΩ (Max.) @ VGS = 10 V,
ID = 14 A
• Low Gate Charge (Typ. 82.5 nC)
• Low Crss (Typ. 185 pF)
• 100% Avalanche Tested
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
D
GDS
TO-220
G
GDS TO-220F
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
FQP32N20C FQPF32N20C
200
28.0 28.0 *
17.8 17.8 *
112 112 *
± 30
955
28.0
15.6
5.5
156 50
1.25 0.4
-55 to +150
300
FQP32N20C
0.8
62.5
FQPF32N20C
2.51
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation
FQP32N20C / FQPF32N20C Rev. C1
1
www.fairchildsemi.com
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
※ Notes :
1. VGS = 0 V
2. ID = 250 μ A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation inThis Area
is Limited by R DS(on)
102
100 μs
1 ms
101 10 ms
DC
100 ※Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
10-1
100
101 102
VDS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area
for FQP32N20C
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. VGS = 10 V
2. ID = 14 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs Temperature
Operation in This Area
is Limited by R DS(on)
102
10 μs
100 μs
101 1 ms
10 ms
100 ※ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
DC
10-1
100
101 102
VDS, Drain-Source Voltage [V]
Figure 9-2. Maximum Safe Operating Area
for FQPF32N20C
30
25
20
15
10
5
0
25 50 75 100 125 150
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs Case Temperature
©2004 Fairchild Semiconductor Corporation
FQP32N20C / FQPF32N20C Rev. C1
4
www.fairchildsemi.com
4페이지 Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D = --GG--aa--tt-ee--PP--u-u-ll-ss-ee---WP--e-i-dr-ito-h-d-
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
©2004 Fairchild Semiconductor Corporation
FQP32N20C / FQPF32N20C Rev. C1
7
www.fairchildsemi.com
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
FQPF32N20C | N-Channel QFET MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |