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PDF TQM7M6018 Data sheet ( Hoja de datos )
| Número de pieza | TQM7M6018 | |
| Descripción | Dual-Broadband Power Amplifier Module | |
| Fabricantes | TriQuint Semiconductor | |
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TQM7M6018
Dual-Broadband Power Amplifier Module
Applications
• WCDMA Handsets / Data Cards
• Bands 1, 2, 5, 8, 25, 26
• BC0 / BC1 CDMA / EVDO Handsets / Data Cards
• HSDPA / HSUPA / HSPA+
Product Features
• Integrated high efficiency dual-broadband two gain
state power amplifier, VREG circuitry, input band
select switch and directional coupler
• Small Size = 4.0 mm x 3.0 mm
• Low Quiescent Current in LPM
• High Max Power PAE
• No External Voltage Regulation Required
• APT (Average Power Tracking) Capable
General Description
The TQM7M6018 PA module integrates two high
efficiency BiHEMT power amplifiers, an input band
select switch, a directional coupler and Vreg circuitry into
a compact 4.0 mm x 3.0 mm package. TriQuint’s
CuFlip® assembly technology and BiHEMT GaAs
process provides a compact, low cost solution optimized
for the Qualcomm WTR2605 transceiver with state-of-
the-art HPM PAE.
The TQM7M6018 is a power amplifier module for bands
1, 2, 5, 8, 25 and 26 for use with WCDMA and CDMA
modulations. The combination of high performance, low
cost and small size makes the TQM7M6018 ideally
suited for both mobile handset and data card
applications.
Functional Block Diagram
Vbatt
RFin
VenHB
VenLB
Vmode
GND
RFout_HB
GND
Vcc
GND
RFout_LB
GND
Electrical Specifications
Parameter B1 B2 B5 B8 Units
Max POUT
+28.3 +28.3 +27.0 +28.0 dBm
HPM Pmax PAE *
45
%
Rx Noise (typ)
−138 −136 −135 −135 dBm/Hz
HPM Gain
27 dB
Typical performance for WCDMA Rel99,
VCC=+3.4 VDC, VEN=HIGH, TC=25 °C.
* PAE measured at required Vcc for Rel99
ACLR1 ≤ 40 dBc.
Datasheet: Rev. J 06-23-14
© 2014 TriQuint
Ordering Information
Part No.
Description
TQM7M6018
Dual-Broadband PAM
Standard T/R size = 2500 pieces on a 13” reel
- 1 of 16 -
Disclaimer: Subject to change without notice
www.triquint.com
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