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PDF NCV8535 Data sheet ( Hoja de datos )

Número de pieza NCV8535
Descripción 500mA Low Dropout Regulator
Fabricantes ON Semiconductor 
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No Preview Available ! NCV8535 Hoja de datos, Descripción, Manual

NCV8535
Ultra High Accuracy, Low Iq,
500 mA Low Dropout
Regulator with Enable
The NCV8535 is a high performance, low dropout regulator. With
accuracy of 0.9% over line and load and ultralow quiescent current
and noise it encompasses all of the necessary features required by
today’s consumer electronics. This unique device is guaranteed to be
stable without a minimum load current requirement and stable with
any type of capacitor as small as 1.0 mF. The NCV8535 also comes
equipped with sense and noise reduction pins to increase the overall
utility of the device. The NCV8535 offers reverse bias protection.
Features
High Accuracy Over Line and Load (0.9% at 25C)
UltraLow Dropout Voltage at Full Load (260 mV typ.)
No Minimum Output Current Required for Stability
Low Noise (31 mVrms w/10 nF Cnr and 51 mVrms w/out Cnr)
Low Shutdown Current (0.07 mA)
Reverse Bias Protected
2.9 V to 12 V Supply Range
Thermal Shutdown Protection
Current Limitation
Requires Only 1.0 mF Output Capacitance for Stability
Stable with Any Type of Capacitor (including MLCC)
Available in 1.5 V, 1.8 V, 1.9 V, 2.5 V, 2.8 V, 2.85 V, 3.0 V, 3.3 V,
3.5 V, 5.0 V and Adjustable Output Voltages
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ100
Qualified and PPAP Capable
These are PbFree Devices
Applications
PCMCIA Card
Cellular Phones
Camcoders and Cameras
Networking Systems, DSL/Cable Modems
Cable SetTop Box
MP3/CD Players
DSP Supply
Displays and Monitors
http://onsemi.com
DFN10
MN SUFFIX
CASE 485C
PIN CONFIGURATION
Fixed Version
Pin 1, 2. Vout
3. Sense
4. GND
5, 6. NC
7. NR
8. SD
9, 10. Vin
Adj Version
Pin 1, 2. Vout
3. Adj
4. GND
5, 6. NC
7. NR
8. SD
9, 10. Vin
MARKING DIAGRAM
1 V8535
xxx
ALYWG
G
V8535= Specific Device Code
xxx = ADJ, 150, 180, 190, 250, 280,
285, 300, 330, 350, 500
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 21 of this data sheet.
Semiconductor Components Industries, LLC, 2013
May, 2013 Rev. 4
1
Publication Order Number:
NCV8535/D

1 page




NCV8535 pdf
NCV8535
ELECTRICAL CHARACTERISTICS – 5.0 V
(Vout = 5.0 V typical, Vin = 5.4 V, TA = 40C to +85C, unless otherwise noted, Note 2.)
Characteristic
Symbol
Min
Typ
Max Unit
Output Voltage (Accuracy)
Vin = 5.4 V to 9.0 V, Iload = 0.1 mA to 500 mA, TA = 25C
Output Voltage (Accuracy)
Vin = 5.4 V to 9.0 V, Iload = 0.1 mA to 500 mA, TA = 0C to +85C
Output Voltage (Accuracy)
Vin = 5.4 V to 9.0 V, Iload = 0.1 mA to 500 mA, TA = 40C to +125C
Line Regulation
Vin = 5.4 V to 12 V, Iload = 0.1 mA
Load Regulation
Vin = 5.4 V, Iload = 0.1 mA to 500 mA
Dropout Voltage (See App Note)
Iload = 500 mA
Iload = 300 mA
Iload = 50 mA
Iload = 0.1 mA
Peak Output Current (See Figure 16)
Vout
Vout
Vout
LineReg
0.9%
4.955
1.4%
4.930
1.5%
4.925
LoadReg
VDO
Ipk 500
5.0
5.0
5.0
0.04
0.04
700
+0.9%
5.045
+1.4%
5.070
+1.5%
5.075
V
V
V
mV/V
mV/mA
mV
340
230
110
10
830 mA
Short Output Current (See Figure 16)
Thermal Shutdown
Ground Current
In Regulation
Iload = 500 mA (Note 3)
Iload = 300 mA (Note 3)
Iload = 50 mA
Iload = 0.1 mA
Isc
TJ
IGND
930 mA
160 C
9.0 14 mA
4.6 7.5
0.8 2.5
190 mA
In Dropout
Vin = 4.9 V, Iload = 0.1 mA
500 mA
In Shutdown
SD = 0 V
Output Noise
Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF
Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF
Shutdown
Threshold Voltage ON
Threshold Voltage OFF
IGNDsh
Vnoise
0.07 1.0
mA
93 mVrms
58 mVrms
2.0 V
0.4 V
SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin
ISD
0.07 1.0
mA
Output Current In Shutdown Mode, Vout = 0 V
IOSD
0.07 1.0
mA
Reverse Bias Protection, Current Flowing from the Output Pin to GND
(Vin = 0 V, Vout_forced = 5.0 V)
IOUTR
10
mA
2. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25C. Low
duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
3. TA must be greater than 0C.
http://onsemi.com
5

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NCV8535 arduino
NCV8535
ELECTRICAL CHARACTERISTICS 2.5 V
(Vout = 2.5 V typical, Vin = 2.9 V, TA = 40C to +85C, unless otherwise noted, Note 16.)
Characteristic
Symbol
Min
Typ
Max Unit
Output Voltage (Accuracy)
Vin = 2.9 V to 6.5 V, Iload = 0.1 mA to 500 mA, TA = 25C
Output Voltage (Accuracy)
Vin = 2.9 V to 6.5 V, Iload = 0.1 mA to 500 mA, TA = 0C to +85C
Output Voltage (Accuracy), (Note 17)
Vin = 2.9 V to 6.5 V, Iload = 0.1 mA to 500 mA, TA = 40C to +125C
Line Regulation
Vin = 2.9 V to 12 V, Iload = 0.1 mA
Load Regulation
Vin = 2.9 V, Iload = 0.1 mA to 500 mA
Dropout Voltage (See App Note)
Iload = 500 mA (Note 18)
Iload = 300 mA (Note 18)
Iload = 50 mA
Iload = 0.1mA
Peak Output Current (See Figure 16)
Short Output Current (See Figure 16)
Thermal Shutdown
Ground Current
In Regulation
Iload = 500 mA (Note 18)
Iload = 300 mA (Note 18)
Iload = 50 mA
Iload = 0.1 mA
Vout
Vout
Vout
LineReg
0.9%
2.477
1.4%
2.465
1.5%
2.462
LoadReg
VDO
Ipk
Isc
TJ
IGND
500
2.5
2.5
2.5
0.04
0.04
700
160
9.0
4.6
0.8
+0.9%
2.523
+1.4%
2.535
+1.5%
2.538
V
V
V
mV/V
mV/mA
mV
340
230
110
10
800 mA
900 mA
C
14 mA
7.5
2.5
190 mA
In Dropout
Vin = 2.4 V, Iload = 0.1 mA
500 mA
In Shutdown
SD = 0 V
Output Noise
Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF
Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF
Shutdown
Threshold Voltage ON
Threshold Voltage OFF
IGNDsh
Vnoise
0.07 1.0
mA
56 mVrms
35 mVrms
2.0 V
0.4 V
SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin
ISD
0.07 1.0
mA
Output Current In Shutdown Mode, Vout = 0 V
IOSD
0.07 1.0
mA
Reverse Bias Protection, Current Flowing from the Output Pin to GND
(Vin = 0 V, Vout_forced = 2.5 V)
IOUTR
10
mA
16. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25C. Low
duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
17. For output current capability for TA < 0C, please refer to Figure 20.
18. TA must be greater than 0C.
http://onsemi.com
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