|
|
|
부품번호 | BTA310X-600E 기능 |
|
|
기능 | 3Q Hi-Com Triac | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 13 페이지수
BTA310X-600E
3Q Hi-Com Triac
28 May 2014
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full
pack" plastic package. This "series E" triac balances the requirements of commutation
performance and gate sensitivity and is intended for interfacing with low power drivers
including microcontrollers.
2. Features and benefits
• 3Q technology for improved noise immunity
• Direct interfacing with low power drivers and microcontrollers
• Good immunity to false turn-on by dV/dt
• High commutation capability with sensitive gate
• High voltage capability
• Isolated mounting base package
• Planar passivated for voltage ruggedness and reliability
• Sensitive gate for easy logic level triggering
• Triggering in three quadrants only
3. Applications
• Industrial and domestic heating circuits
• Motor controls e.g. washing machines and vacuum cleaners
• Refrigeration and air-conditioner compressor controls
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
Tj junction temperature
IT(RMS)
RMS on-state current full sine wave; Th ≤ 73 °C; Fig. 1; Fig. 2;
Fig. 3
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 600 V
- - 85 A
- - 125 °C
- - 10 A
0.5 -
10 mA
Scan or click this QR code to view the latest information for this product
NXP Semiconductors
BTA310X-600E
3Q Hi-Com Triac
15
Ptot
(W)
12
9
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
6
α
α = 180°
120°
90°
60°
30°
003aaj691 65
Th(max)
(°C)
77
89
101
3 113
0
0 2.5 5 7.5 10
Fig. 3.
α = conduction angle
a = form factor = IT(RMS) / IT(AV)
Total power dissipation as a function of RMS on-state current; maximum values
120
ITSM
(A)
100
IT(RMS) (A)
125
12.5
003aaj692
80
60
40 IT ITSM
20
0
1
f = 50 Hz
10
t
1/f
Tj(init) = 25 °C max
102 103
number of cycles (n)
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA310X-600E
Product data sheet
All information provided in this document is subject to legal disclaimers.
28 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved
4 / 13
4페이지 NXP Semiconductors
BTA310X-600E
3Q Hi-Com Triac
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
IL
latching current
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8
IH
holding current
VD = 12 V; Tj = 25 °C; Fig. 9
VT
on-state voltage
IT = 12 A; Tj = 25 °C; Fig. 10
VGT
gate trigger voltage
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11
VD = 400 V; IT = 0.1 A; Tj = 125 °C;
Fig. 11
ID
off-state current
VD = 600 V; Tj = 125 °C
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 402 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
dIcom/dt
rate of change of
commutating current
VD = 400 V; Tj = 125 °C; IT(RMS) = 10 A;
dVcom/dt = 20 V/µs; (snubberless
condition); gate open circuit
VD = 400 V; Tj = 125 °C; IT(RMS) = 10 A;
dVcom/dt = 10 V/µs; gate open circuit
VD = 400 V; Tj = 125 °C; IT(RMS) = 10 A;
dVcom/dt = 1 V/µs; gate open circuit
Min Typ Max Unit
0.5 -
10 mA
0.5 -
10 mA
0.5 -
10 mA
- - 25 mA
- - 30 mA
- - 25 mA
- - 15 mA
- 1.25 1.5 V
-
0.7 1
V
0.25 0.4 -
V
- 0.1 0.5 mA
50 - - V/µs
2 - - A/ms
3 - - A/ms
6 - - A/ms
BTA310X-600E
Product data sheet
All information provided in this document is subject to legal disclaimers.
28 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved
7 / 13
7페이지 | |||
구 성 | 총 13 페이지수 | ||
다운로드 | [ BTA310X-600E.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BTA310X-600E | 3Q Hi-Com Triac | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |