Datasheet.kr   

BTA310X-600E 데이터시트 PDF




NXP Semiconductors에서 제조한 전자 부품 BTA310X-600E은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 BTA310X-600E 자료 제공

부품번호 BTA310X-600E 기능
기능 3Q Hi-Com Triac
제조업체 NXP Semiconductors
로고 NXP Semiconductors 로고


BTA310X-600E 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 13 페이지수

미리보기를 사용할 수 없습니다

BTA310X-600E 데이터시트, 핀배열, 회로
BTA310X-600E
3Q Hi-Com Triac
28 May 2014
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full
pack" plastic package. This "series E" triac balances the requirements of commutation
performance and gate sensitivity and is intended for interfacing with low power drivers
including microcontrollers.
2. Features and benefits
3Q technology for improved noise immunity
Direct interfacing with low power drivers and microcontrollers
Good immunity to false turn-on by dV/dt
High commutation capability with sensitive gate
High voltage capability
Isolated mounting base package
Planar passivated for voltage ruggedness and reliability
Sensitive gate for easy logic level triggering
Triggering in three quadrants only
3. Applications
Industrial and domestic heating circuits
Motor controls e.g. washing machines and vacuum cleaners
Refrigeration and air-conditioner compressor controls
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
Tj junction temperature
IT(RMS)
RMS on-state current full sine wave; Th ≤ 73 °C; Fig. 1; Fig. 2;
Fig. 3
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 600 V
- - 85 A
- - 125 °C
- - 10 A
0.5 -
10 mA
Scan or click this QR code to view the latest information for this product




BTA310X-600E pdf, 반도체, 판매, 대치품
NXP Semiconductors
BTA310X-600E
3Q Hi-Com Triac
15
Ptot
(W)
12
9
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
6
α
α = 180°
120°
90°
60°
30°
003aaj691 65
Th(max)
(°C)
77
89
101
3 113
0
0 2.5 5 7.5 10
Fig. 3.
α = conduction angle
a = form factor = IT(RMS) / IT(AV)
Total power dissipation as a function of RMS on-state current; maximum values
120
ITSM
(A)
100
IT(RMS) (A)
125
12.5
003aaj692
80
60
40 IT ITSM
20
0
1
f = 50 Hz
10
t
1/f
Tj(init) = 25 °C max
102 103
number of cycles (n)
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA310X-600E
Product data sheet
All information provided in this document is subject to legal disclaimers.
28 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved
4 / 13

4페이지










BTA310X-600E 전자부품, 판매, 대치품
NXP Semiconductors
BTA310X-600E
3Q Hi-Com Triac
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
IL
latching current
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8
IH
holding current
VD = 12 V; Tj = 25 °C; Fig. 9
VT
on-state voltage
IT = 12 A; Tj = 25 °C; Fig. 10
VGT
gate trigger voltage
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11
VD = 400 V; IT = 0.1 A; Tj = 125 °C;
Fig. 11
ID
off-state current
VD = 600 V; Tj = 125 °C
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 402 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
dIcom/dt
rate of change of
commutating current
VD = 400 V; Tj = 125 °C; IT(RMS) = 10 A;
dVcom/dt = 20 V/µs; (snubberless
condition); gate open circuit
VD = 400 V; Tj = 125 °C; IT(RMS) = 10 A;
dVcom/dt = 10 V/µs; gate open circuit
VD = 400 V; Tj = 125 °C; IT(RMS) = 10 A;
dVcom/dt = 1 V/µs; gate open circuit
Min Typ Max Unit
0.5 -
10 mA
0.5 -
10 mA
0.5 -
10 mA
- - 25 mA
- - 30 mA
- - 25 mA
- - 15 mA
- 1.25 1.5 V
-
0.7 1
V
0.25 0.4 -
V
- 0.1 0.5 mA
50 - - V/µs
2 - - A/ms
3 - - A/ms
6 - - A/ms
BTA310X-600E
Product data sheet
All information provided in this document is subject to legal disclaimers.
28 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved
7 / 13

7페이지


구       성 총 13 페이지수
다운로드[ BTA310X-600E.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
BTA310X-600E

3Q Hi-Com Triac

NXP Semiconductors
NXP Semiconductors

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵