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Datasheet NVJD4401N Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | NVJD4401N | Small Signal MOSFET NTJD4401N, NVJD4401N
Small Signal MOSFET
20 V, Dual N−Channel, SC−88 ESD Protection
Features
• Small Footprint (2 x 2 mm) • Low Gate Charge N−Channel Device • ESD Protected Gate • Same Package as SC−70 (6 Leads) • AEC−Q101 Qualified and PPAP Capable − NVJD4401N • These Devi | ON Semiconductor | mosfet |
NVJ Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | NVJD4401N | Small Signal MOSFET NTJD4401N, NVJD4401N
Small Signal MOSFET
20 V, Dual N−Channel, SC−88 ESD Protection
Features
• Small Footprint (2 x 2 mm) • Low Gate Charge N−Channel Device • ESD Protected Gate • Same Package as SC−70 (6 Leads) • AEC−Q101 Qualified and PPAP Capable − NVJD4401N • These Devi ON Semiconductor mosfet | | |
2 | NVJD5121N | Power MOSFET, Transistor NVJD5121N
Power MOSFET
60 V, 300 mA, Dual N−Channel with ESD Protection, SC−88
Features
• Low RDS(on) • Low Gate Threshold • Low Input Capacitance • ESD Protected Gate • NVJD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 ON Semiconductor mosfet | | |
3 | NVJS4151P | Trench Power MOSFET NVJS4151P
Trench Power MOSFET
−20 V, −4.1 A, Single P−Channel, SC−88
Features
• Leading Trench Technology for Low RDS(ON) Extending Battery Life • SC−88 Small Outline (2x2 mm) for Maximum Circuit Board
Utilization, Same as SC−70−6
• Gate Diodes for ESD Protection • AEC−Q101 ON Semiconductor mosfet | | |
4 | NVJS4405N | Small Signal MOSFET NTJS4405N, NVJS4405N
Small Signal MOSFET
25 V, 1.2 A, Single, N−Channel, SC−88
Features
• Advance Planar Technology for Fast Switching, Low RDS(on) • Higher Efficiency Extending Battery Life • AEC−Q101 Qualified and PPAP Capable − NVJS4405N • These Devices are Pb−Free and are RoH ON Semiconductor mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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