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Número de pieza | NVDD5894NL | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! NVDD5894NL
Power MOSFET
40 V, 10 mW, 64 A, Dual N−Channel
DPAK−5L
Features
• Low RDS(on) to Minimize Conduction Losses
• High Current Capability
• Avalanche Energy Specified
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent RqJC (Notes 1 & 3)
Power Dissipation
(Note 1)
RqJC
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
Continuous Drain
C(Nuortreesnt1R, 2qJ&A 3)
Power
(Notes
Dissipation
1 & 2)
RqJA
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
TA = 100°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
TJ, Tstg
40
"20
64
45
75
38
14
10
3.8
1.9
324
−55 to
+175
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
IS 75 A
Single Pulse Drain−to−Source Avalanche
EAS 94 mJ
Energy (TJ = 25°C, IL(pk) = 25 A, L = 0.3 mH)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case − Steady State (Drain)
RqJC
2.0 °C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
40
1. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
http://onsemi.com
V(BR)DSS
40 V
RDS(on) Max
10 mW @ 10 V
14.5 mW @ 4.5 V
Dual N−Channel
D
ID Max
64 A
G1 G2
S1 S2
DPAK 5−LEAD
CASE 175AA
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
x
S1 G1 G2 S2
Y
WW
5894L
G
= Year
= Work Week
= Specific Device Code
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NVDD5894NLT4G DPAK−5 2500 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 0
1
Publication Order Number:
NVDD5894NL/D
1 page 10
Duty Cycle = 0.5
1
0.2
0.1
0.05
0.1 0.02
0.01
Single Pulse
0.01
0.000001
0.00001
NVDD5894NL
TYPICAL CHARACTERISTICS
0.0001
0.001
0.01
PULSE TIME (sec)
Figure 13. Thermal Response
RqJC = 2°C/W Steady State
0.1 1 10
http://onsemi.com
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet NVDD5894NL.PDF ] |
Número de pieza | Descripción | Fabricantes |
NVDD5894NL | Power MOSFET ( Transistor ) | ON Semiconductor |
NVDD5894NLT4G | Power MOSFET ( Transistor ) | ON Semiconductor |
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