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부품번호 | NVS4409N 기능 |
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기능 | Small Signal MOSFET | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 5 페이지수
NTS4409N, NVS4409N
Small Signal MOSFET
25 V, 0.75 A, Single, N−Channel,
ESD Protection, SC−70/SOT−323
Features
• Advance Planar Technology for Fast Switching, Low RDS(on)
• Higher Efficiency Extending Battery Life
• AEC−Q101 Qualified and PPAP Capable − NVS4409N
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Boost and Buck Converter
• Load Switch
• Battery Protection
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Drain Current
Continuous Drain Current
(Note 1)
Power Dissipation (Note 1)
t < 5 s TA = 25°C
Steady TA = 25°C
State TA = 75°C
Steady State
Power Dissipation (Note 1)
tv5s
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
ID
PD
PD
IDM
TJ,
TSTG
25
"8.0
0.75
0.7
0.6
0.28
0.33
3.0
−55 to
+150
Source Current (Body Diode) (Note 1)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
IS 0.3
TL 260
ESD Rating − Machine Model
25
Unit
V
V
A
A
W
W
A
°C
A
°C
V
THERMAL RESISTANCE RATINGS
Rating
Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
RqJA
450 °C/W
Junction−to−Ambient − t v 5 s (Note 1)
RqJA
375
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
http://onsemi.com
V(BR)DSS
25 V
RDS(on) Typ
249 mW @ 4.5 V
299 mW @ 2.7 V
ID Max
0.75 A
SC−70 (3−Leads)
Gate 1
3 Drain
Source 2
Top View
MARKING DIAGRAM &
PIN ASSIGNMENT
3
Drain
SC−70/SOT−323
CASE 419
STYLE 8
T4 WG
G
1
Gate
2
Source
T4 = Device Code
W = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTS4409NT1G SOT−323 3000 / Tape & Reel
(Pb−Free)
NVS4409NT1G SOT−323 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 4
1
Publication Order Number:
NTS4409N/D
NTS4409N, NVS4409N
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
5
4
3
2 QGS
QG(TOT)
QGD
VGS
1
ID = 0.8 A
0 TJ = 25°C
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
3.2
VGS = 0 V
2.4
1.6
0.8
TJ = 125°C
0 TJ = 25°C
0 0.2 0.4 0.6 0.8 1 1.2
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 8. Diode Forward Voltage vs. Current
http://onsemi.com
4
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부품번호 | 상세설명 및 기능 | 제조사 |
NVS4409N | Small Signal MOSFET | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |