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NVS4409N 데이터시트 PDF




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기능 Small Signal MOSFET
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NVS4409N 데이터시트, 핀배열, 회로
NTS4409N, NVS4409N
Small Signal MOSFET
25 V, 0.75 A, Single, NChannel,
ESD Protection, SC70/SOT323
Features
Advance Planar Technology for Fast Switching, Low RDS(on)
Higher Efficiency Extending Battery Life
AECQ101 Qualified and PPAP Capable NVS4409N
These Devices are PbFree and are RoHS Compliant
Applications
Boost and Buck Converter
Load Switch
Battery Protection
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
DraintoSource Voltage
GatetoSource Voltage
Drain Current
Continuous Drain Current
(Note 1)
Power Dissipation (Note 1)
t < 5 s TA = 25°C
Steady TA = 25°C
State TA = 75°C
Steady State
Power Dissipation (Note 1)
tv5s
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
ID
PD
PD
IDM
TJ,
TSTG
25
"8.0
0.75
0.7
0.6
0.28
0.33
3.0
55 to
+150
Source Current (Body Diode) (Note 1)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
IS 0.3
TL 260
ESD Rating Machine Model
25
Unit
V
V
A
A
W
W
A
°C
A
°C
V
THERMAL RESISTANCE RATINGS
Rating
Symbol Max Unit
JunctiontoAmbient – Steady State (Note 1)
RqJA
450 °C/W
JunctiontoAmbient t v 5 s (Note 1)
RqJA
375
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
http://onsemi.com
V(BR)DSS
25 V
RDS(on) Typ
249 mW @ 4.5 V
299 mW @ 2.7 V
ID Max
0.75 A
SC70 (3Leads)
Gate 1
3 Drain
Source 2
Top View
MARKING DIAGRAM &
PIN ASSIGNMENT
3
Drain
SC70/SOT323
CASE 419
STYLE 8
T4 WG
G
1
Gate
2
Source
T4 = Device Code
W = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTS4409NT1G SOT323 3000 / Tape & Reel
(PbFree)
NVS4409NT1G SOT323 3000 / Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
October, 2011 Rev. 4
1
Publication Order Number:
NTS4409N/D




NVS4409N pdf, 반도체, 판매, 대치품
NTS4409N, NVS4409N
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
5
4
3
2 QGS
QG(TOT)
QGD
VGS
1
ID = 0.8 A
0 TJ = 25°C
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Qg, TOTAL GATE CHARGE (nC)
Figure 7. GatetoSource and
DraintoSource Voltage vs. Total Charge
3.2
VGS = 0 V
2.4
1.6
0.8
TJ = 125°C
0 TJ = 25°C
0 0.2 0.4 0.6 0.8 1 1.2
VSD, SOURCETODRAIN VOLTAGE (VOLTS)
Figure 8. Diode Forward Voltage vs. Current
http://onsemi.com
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부품번호상세설명 및 기능제조사
NVS4409N

Small Signal MOSFET

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