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NVD4804N 데이터시트 PDF




ON Semiconductor에서 제조한 전자 부품 NVD4804N은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 NVD4804N 기능
기능 Power MOSFET ( Transistor )
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NVD4804N 데이터시트, 핀배열, 회로
NTD4804N, NVD4804N
Power MOSFET
30 V, 117 A, Single N−Channel, DPAK/IPAK
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
AEC Q101 Qualified − NVD4804N
These Devices are Pb−Free and are RoHS Compliant
Applications
CPU Power Delivery
DC−DC Converters
Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (RqJA) (Note 1)
Power Dissipation
(RqJA) (Note 1)
Continuous Drain
Current (RqJA) (Note 2)
Power Dissipation
(RqJA) (Note 2)
Continuous Drain
Current (RqJC)
(Note 1)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
TC = 25°C
TC = 85°C
VDSS
VGS
ID
PD
ID
PD
ID
30
"20
19.6
15.2
2.66
14.5
11
1.43
124
96
V
V
A
W
A
W
A
Power Dissipation
(RqJC) (Note 1)
TC = 25°C
Pulsed Drain Current tp=10ms TA = 25°C
Current Limited by Package
TA = 25°C
Operating Junction and Storage Temperature
PD
IDM
IDmaxPkg
TJ, Tstg
107
230
45
−55 to
175
W
A
A
°C
Source Current (Body Diode)
Drain to Source dV/dt
IS
dV/dt
78 A
6.0 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 24 V, VGS = 10 V,
L = 1.0 mH, IL(pk) = 30 A, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
EAS 450 mJ
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
http://onsemi.com
V(BR)DSS
30 V
RDS(on) MAX
4.0 mW @ 10 V
5.5 mW @ 4.5 V
D
ID MAX
117 A
N−Channel
G
S
4
4
12
3
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
1
2
3
CASE 369AD CASE 369D
3 IPAK
IPAK
(Straight Lead) (Straight Lead
DPAK)
4
Drain
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
4 Drain
Drain
2
1 Drain 3
Gate Source
1 23
Gate Drain Source 1 2 3
Gate Drain Source
A = Assembly Location
Y = Year
WW = Work Week
4804N = Device Code
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
May, 2014 − Rev. 9
1
Publication Order Number:
NTD4804N/D




NVD4804N pdf, 반도체, 판매, 대치품
NTD4804N, NVD4804N
TYPICAL PERFORMANCE CURVES
240
10 V
6V
200
160
TJ = 25°C
4.5 V
120 4 V
80
3.6 V
40
3.2 V
0
012 34 5
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
240
VDS 10 V
200
160
120
80
TJ = 125°C
40 TJ = 25°C
0 TJ = −55°C
01 2 3 4 5 6 7
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.010
0.009
0.008
0.007
0.006
0.005
0.004
ID = 30 A
TJ = 25°C
0.01
TJ = 25°C
0.0075
0.005
0.0025
VGS = 4.5 V
VGS = 11.5 V
0.003
2 4 6 8 10
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
0
10 20 30 40 50 60 70 80 90 100
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.7
1.6 ID = 30 A
VGS = 10 V
1.5
1.4
1.3
100,000
VGS = 0 V
10,000
TJ = 175°C
1.2
1.1
1000
1.0 TJ = 125°C
0.9
0.8
0.7
−50 −25
0 25 50 75 100 125 150 175
100
0
5 10 15 20
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Drain Voltage
http://onsemi.com
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NVD4804N 전자부품, 판매, 대치품
NTD4804N, NVD4804N
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA
ISSUE B
L3
L4
b2
e
E
b3
4
12 3
C
A
A
B c2
D
DETAIL A
H
bc
0.005 (0.13) M C
L2
GAUGE
PLANE
H
L
L1
A1
DETAIL A
ROTATED 905 CW
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
Z OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
SEATING
PLANE
INCHES
DIM MIN MAX
A 0.086 0.094
A1 0.000 0.005
b 0.025 0.035
b2 0.030 0.045
b3 0.180 0.215
c 0.018 0.024
c2 0.018 0.024
D 0.235 0.245
E 0.250 0.265
e 0.090 BSC
H 0.370 0.410
L 0.055 0.070
L1 0.108 REF
L2 0.020 BSC
L3 0.035 0.050
L4 −−− 0.040
Z 0.155 −−−
MILLIMETERS
MIN MAX
2.18 2.38
0.00 0.13
0.63 0.89
0.76 1.14
4.57 5.46
0.46 0.61
0.46 0.61
5.97 6.22
6.35 6.73
2.29 BSC
9.40 10.41
1.40 1.78
2.74 REF
0.51 BSC
0.89 1.27
−−− 1.01
3.93 −−−
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
3.00
0.118
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
5.80
0.228
1.60
0.063
6.17
0.243
ǒ ǓSCALE 3:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
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NVD4804N

Power MOSFET ( Transistor )

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