|
|
|
부품번호 | NVTR4503N 기능 |
|
|
기능 | Power MOSFET ( Transistor ) | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 5 페이지수
NTR4503N, NVTR4503N
Power MOSFET
30 V, 2.5 A, Single N−Channel, SOT−23
Features
• Leading Planar Technology for Low Gate Charge / Fast Switching
• 4.5 V Rated for Low Voltage Gate Drive
• SOT−23 Surface Mount for Small Footprint (3 x 3 mm)
• AEC Q101 Qualified − NVTR4503N
• These Devices are Pb−Free and are RoHS Compliant
Applications
• DC−DC Conversion
• Load/Power Switch for Portables
• Load/Power Switch for Computing
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
t ≤ 10 s
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
30
±20
2.0
1.5
2.5
0.73
V
V
A
W
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
ID
PD
1.5 A
1.1
0.42 W
Pulsed Drain Current
tp = 10 ms
IDM 10 A
Operating Junction and Storage Temperature
TJ, −55 to °C
Tstg 150
Source Current (Body Diode)
IS 2.0 A
Peak Source Current
(Diode Forward)
tp = 10 ms
ISM
4.0 A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient − Steady State (Note 1)
RqJA
170 °C/W
Junction−to−Ambient − t < 10 s (Note 1)
RqJA
100
Junction−to−Ambient − Steady State (Note 2)
RqJA
300
1. Surface−mounted on FR4 board using 1 in sq pad size.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
www.onsemi.com
V(BR)DSS
30 V
RDS(on) TYP
85 mW @ 10 V
105 mW @ 4.5 V
ID MAX
2.5 A
N−Channel
D
G
S
3
1
2
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM/
PIN ASSIGNMENT
3
Drain
TR3 MG
G
1
Gate
2
Source
TR3 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTR4503NT1G SOT−23 3000 / Tape & Reel
(Pb−Free)
NVTR4503NT1G SOT−23 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
May, 2015 − Rev. 7
1
Publication Order Number:
NTR4503N/D
NTR4503N, NVTR4503N
TYPICAL PERFORMANCE CURVES
300
VDS = 0 V
Ciss
200
Crss
VGS = 0 V
TJ = 25°C
15
10
VDS
QG
15
VGS
10
100
5 QGS
QGD
5
Coss
ID = 2.5 A
TJ = 25°C
00
10 5 0 5 10 15 20 25 30
VGS VDS
0
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1 23
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
0
4
100
VDD = 24 V
ID = 2.5 A
VGS = 10 V
10
td(off)
tf
td(on)
tr
3
VGS = 0 V
TJ = 25°C
2
1
1
1 10 100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
1
Figure 10. Diode Forward Voltage vs. Current
www.onsemi.com
4
4페이지 | |||
구 성 | 총 5 페이지수 | ||
다운로드 | [ NVTR4503N.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
NVTR4503N | Power MOSFET ( Transistor ) | ON Semiconductor |
NVTR4503NT1G | Power MOSFET ( Transistor ) | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |