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PDF STD5406NT4G Data sheet ( Hoja de datos )
| Número de pieza | STD5406NT4G | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTD5406N, STD5406N
Power MOSFET
40 V, 70 A, Single N−Channel, DPAK
Features
• Low RDS(on)
• High Current Capability
• Low Gate Charge
• STD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Electronic Brake Systems
• Electronic Power Steering
• Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current − RqJC
Power Dissipation −
RqJC
Continuous Drain
Current − RqJA
(Note 1)
Steady
State
Steady
State
TC = 25°C
TC = 125°C
TC = 25°C
Steady TA = 25°C
State
TA = 125°C
VDSS
VGS
ID
PD
ID
40
±20
70
40
100
12.2
7.0
V
V
A
W
A
Power Dissipation −
RqJA (Note 1)
Steady TA = 25°C
State
PD
3.0 W
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
IDM
TJ,
TSTG
150
−55 to
175
A
°C
Source Current (Body Diode) Pulsed
Single Pulse Drain−to Source Avalanche
Energy − (VDD = 50 V, VGS = 10 V, IPK = 30 A,
L = 1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IS
EAS
TL
63.5 A
450 mJ
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS (Note 1)
Parameter
Symbol Max Unit
Junction−to−Case (Drain)
RθJC
Junction−to−Ambient (Note 1)
RθJA
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
1.5 °C/W
49
© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 7
1
http://onsemi.com
V(BR)DSS
40 V
RDS(ON) TYP
8.7 mΩ @ 10 V
ID MAX
(Note 1)
70 A
D
N−Channel
G
S
4
12
3
DPAK
CASE 369C
STYLE 2
MARKING DIAGRAM
1 AYWW
54
06NG
A
Y
WW
5406N
G
= Assembly Location*
= Year
= Work Week
= Specific Device Code
= Pb−Free Device
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
ORDERING INFORMATION
Device
Package
Shipping†
NTD5406NT4G DPAK 2500 / Tape & Reel
(Pb−Free)
STD5406NT4G* DPAK 2500 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTD5406N/D
1 page  
NTD5406N, STD5406N
TYPICAL PERFORMANCE CURVES
1 D = 0.5
0.2
0.1
0.05
0.1 0.02
0.01
SINGLE PULSE
0.01
0.00001
0.0001
P(pk)
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
t2
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
DUTY CYCLE, D = t1/t2
0.001
0.01
t, TIME (s)
Figure 12. Thermal Response
0.1
1
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| PDF Descargar | [ Datasheet STD5406NT4G.PDF ] | |
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