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NVD5806N 데이터시트 PDF




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기능 Power MOSFET ( Transistor )
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NVD5806N 데이터시트, 핀배열, 회로
NTD5806N, NVD5806N
Power MOSFET
40 V, 33 A, Single N−Channel, DPAK/IPAK
Features
Low RDS(on)
High Current Capability
Avalanche Energy Specified
AEC−Q101 Qualified and PPAP Capable − NVD5806N
These Devices are Pb−Free and are RoHS Compliant
Applications
CCFL Backlight
DC Motor Control
Power Supply Secondary Side Synchronous Rectification
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Gate−to−Source Voltage
− Non−Repetitive (tp < 10 mS)
Continuous Drain
Current (RqJC)
(Note 1)
Power Dissipation
(RqJC) (Note 1)
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
VGS
ID
PD
IDM
TJ, Tstg
40
±20
±30
33
23
40
67
−55 to
175
V
V
V
A
W
A
°C
Source Current (Body Diode)
IS 33 A
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 V, VGS = 10 V, RG = 25 W,
IL(pk) = 28 A, L = 0.1 mH, VDS = 40 V)
EAS
39 mJ
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Junction−to−Case (Drain)
RqJC
Junction−to−Ambient − Steady State (Note 1) RqJA
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces.
Value
3.7
57.5
Unit
°C/W
© Semiconductor Components Industries, LLC, 2014
June, 2014 − Rev. 6
1
http://onsemi.com
V(BR)DSS
40 V
RDS(on) MAX
26 mW @ 4.5 V
19 mW @ 10 V
D
ID MAX
33 A
N−CHANNEL MOSFET
G
S
4
4
12
3
DPAK
CASE 369C
(Surface Mount)
STYLE 2
1
2
3
IPAK
CASE 369D
(Straight Lead DPAK)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
4
Drain
2
1 Drain 3
Gate Source
1 23
Gate Drain Source
A = Assembly Location*
Y = Year
WW = Work Week
5806N = Device Code
G = Pb−Free Package
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
NTD5806N/D




NVD5806N pdf, 반도체, 판매, 대치품
NTD5806N, NVD5806N
TYPICAL PERFORMANCE CHARACTERISTICS
2000
1500
1000
Ciss
VGS = 0 V
TJ = 25°C
15
10
VDS
QT
30
VGS
20
500 Coss
Crss
0
10 5 0
Vgs
5 10 15 20 25 30 35 40
Vds
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
1000
VDD = 32 V
ID = 30 A
VGS = 10 V
100
tf
td(off)
tr
5 Qgs
Qgd
10
0
0
15
ID = 30 A
TJ = 25°C
0
5 10 15 20
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
VGS = 0 V
TJ = 25°C
10
10
td(on)
5
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
0
0.4
0.5
0.6
0.7 0.8
0.9 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
100
10 ms
10 100 ms
1
0.1
0.1
VGS = 10 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
1
10
1 ms
10 ms
dc
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4

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NVD5806N 전자부품, 판매, 대치품
NTD5806N, NVD5806N
PACKAGE DIMENSIONS
V
S
−T−
SEATING
PLANE
B
R
4
123
A
K
IPAK
CASE 369D
ISSUE C
C
E
F
G
J
D 3 PL
0.13 (0.005) M T
H
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES MILLIMETERS
Z
DIM MIN MAX MIN MAX
A 0.235 0.245 5.97 6.35
B 0.250 0.265 6.35 6.73
C 0.086 0.094 2.19 2.38
D 0.027 0.035 0.69 0.88
E 0.018 0.023 0.46 0.58
F 0.037 0.045 0.94 1.14
G 0.090 BSC
2.29 BSC
H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.350 0.380 8.89 9.65
R 0.180 0.215 4.45 5.45
S 0.025 0.040 0.63 1.01
V 0.035 0.050 0.89 1.27
Z 0.155 −−− 3.93 −−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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PUBLICATION ORDERING INFORMATION
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NTD5806N/D

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NVD5806N

Power MOSFET ( Transistor )

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