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NVD5867NL 데이터시트 PDF




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기능 Power MOSFET ( Transistor )
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NVD5867NL 데이터시트, 핀배열, 회로
NVD5867NL
Power MOSFET
60 V, 22 A, 39 mW, Single N−Channel
Features
Low RDS(on) to Minimize Conduction Losses
High Current Capability
Avalanche Energy Specified
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent RqJC (Notes 1 & 3)
Power Dissipation RqJC
(Note 1)
Continuous Drain Cur-
rent RqJA (Notes 1, 2 &
3)
Power Dissipation RqJA
(Notes 1 & 2)
Pulsed Drain Current
Current Limited by
Package (Note 3)
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
TA = 25°C
Steady TA = 100°C
State TA = 25°C
TA = 100°C
TA = 25°C, tp = 10 ms
TA = 25°C
VDSS
VGS
ID
PD
ID
PD
IDM
IDmaxpkg
60
"20
22
16
43
21
6.0
4.0
3.3
1.7
85
30
V
V
A
W
A
W
A
A
Operating Junction and Storage Temperature
TJ, Tstg − 55 to °C
175
Source Current (Body Diode)
IS 36 A
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL(pk) = 19 A, L = 0.1 mH, RG = 25 W)
EAS 18 mJ
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case (Drain) (Note 1)
RqJC
3.5 °C/W
Junction−to−Ambient − Steady State (Note 2) RqJA
45
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
http://onsemi.com
V(BR)DSS
60 V
RDS(on)
39 mW @ 10 V
50 mW @ 4.5 V
D
ID
22 A
G
S
N−CHANNEL MOSFET
4
12
3
DPAK
CASE 369AA
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
2
1 Drain 3
Gate Source
Y = Year
WW = Work Week
V5867L = Device Code
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
October, 2014 − Rev. 2
1
Publication Order Number:
NVD5867NL/D




NVD5867NL pdf, 반도체, 판매, 대치품
NVD5867NL
TYPICAL PERFORMANCE CURVES
1000
900
800
700
VGS = 0 V
TJ = 25°C
Ciss
600
500
400
300
200
Coss
100
0 Crss
0 10 20 30 40 50
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
60
Figure 7. Capacitance Variation
1000
VDD = 48 V
ID = 22 A
VGS = 10 V
100
10
tf td(off)
tr
td(on)
10
8
6
4 Qgs
Qgd
QT
VGS
2 VDS = 48 V
ID = 22 A
TJ = 25°C
0
0 5 10 15
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−To−Source Voltage vs.
Total Charge
20
VGS = 0 V
TJ = 25°C
15
10
5
1
1 10 100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
100
10 ms
10 100 ms
1 ms
1
0.1
1
VGS = 10 V
SINGLE PULSE
TC = 25°C
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
10 ms
dc
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0
0.5 0.6
0.7 0.8
0.9 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
20
ID = 19 A
15
10
5
0
25 50
75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
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Power MOSFET ( Transistor )

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