|
|
PDF NVB6412AN Data sheet ( Hoja de datos )
| Número de pieza | NVB6412AN | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NVB6412AN (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
NTB6412AN, NTP6412AN,
NVB6412AN
N-Channel Power MOSFET
100 V, 58 A, 18.2 mW
Features
• Low RDS(on)
• High Current Capability
• 100% Avalanche Tested
• NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Continuous Drain Cur-
rent RqJC
Power Dissipation
RqJC
Steady
State
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Range
VDSS
VGS
ID
PD
IDM
TJ, Tstg
100
$20
58
41
167
240
−55 to
+175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 Vdc, VGS = 10 Vdc,
IL(pk) = 44.7 A, L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
IS 58
EAS 300
TL 260
Unit
V
V
A
W
A
°C
A
mJ
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Case (Drain) Steady State
RqJC
0.9 °C/W
Junction−to−Ambient (Note 1)
RqJA
33
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 2
1
www.onsemi.com
V(BR)DSS
100 V
RDS(ON) MAX
18.2 mW @ 10 V
ID MAX
(Note 1)
58 A
N−Channel
D
G
S
4
4
1
2
3
TO−220AB
CASE 221A
STYLE 5
12
3
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
4
Drain
NTP
6412ANG
AYWW
1
Gate
3
Source
NTB
6412ANG
AYWW
1
Gate
23
Drain Source
2
Drain
6412AN = Specific Device Code
G = Pb−Free Device
A = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
NTB6412AN/D
1 page  
NTB6412AN, NTP6412AN, NVB6412AN
1
D = 0.5
0.2
0.1 0.1
0.05
0.02
0.01 0.01
SINGLE PULSE
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE TIME (s)
Figure 13. Thermal Response
10 100 1000
ORDERING INFORMATION
Device
NTB6412ANG
Package
D2PAK
(Pb−Free)
Shipping†
50 Units / Rail
NTB6412ANT4G
D2PAK
(Pb−Free)
800 / Tape & Reel
NTP6412ANG
TO−220
(Pb−Free)
50 Units / Rail
NVB6412ANT4G
D2PAK
(Pb−Free)
800 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NVB6412AN.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NVB6412AN | N-Channel Power MOSFET / Transistor | ON Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |