|
|
|
부품번호 | NVD6824NLT4G 기능 |
|
|
기능 | Power MOSFET ( Transistor ) | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 6 페이지수
NVD6824NL
Power MOSFET
100 V, 20 mW, 41 A, Single N−Channel
Features
• Low RDS(on) to Minimize Conduction Losses
• High Current Capability
• Avalanche Energy Specified
• AEC−Q101 Qualified
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent RqJC (Note 1)
Power Dissipation
(Note 1)
RqJC
Continuous Drain Cur-
rent RqJA (Notes 1 & 2)
Power
(Notes
Dissipation
1 & 2)
RqJA
Pulsed Drain Current
Current Limited by
Package (Note 3)
TC = 25°C
Steady TC = 100°C
State TC = 25°C
TC = 100°C
TA = 25°C
Steady TA = 100°C
State TA = 25°C
TA = 100°C
TA = 25°C, tp = 10 ms
TA = 25°C
VDSS
VGS
ID
PD
ID
PD
IDM
IDmaxpkg
100
"20
41
29
90
45
8.5
6.0
3.9
1.9
238
60
V
V
A
W
A
W
A
A
Operating Junction and Storage Temperature
TJ, Tstg
−55 to
175
°C
Source Current (Body Diode)
IS 41 A
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VGS = 10 V,
IL(pk) = 40 A, L = 0.1 mH, RG = 25 W)
EAS 80 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case − Steady State (Drain)
RqJC
1.7 °C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
39
1. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
http://onsemi.com
V(BR)DSS
100 V
RDS(on)
20 mW @ 10 V
23 mW @ 4.5 V
D
ID
41 A
N−Channel
G
S
4
12
3
DPAK
CASE 369C
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
2
1 Drain 3
Gate Source
Y
WW
6824L
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NVD6824NLT4G DPAK 2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
March, 2013 − Rev. 1
1
Publication Order Number:
NVD6824NL/D
NVD6824NL
5000
4000
3000
Ciss
TYPICAL CHARACTERISTICS
VGS = 0 V
TJ = 25°C
10
8
6
QT
2000
1000 Coss
0 Crss
0 10 20 30 40 50 60 70 80 90
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
100
1000
VDS = 80 V
ID = 20 A
VGS = 10 V
4 Qgs
Qgd
VDS = 80 V
2 ID = 20 A
TJ = 25°C
0
0 10 20 30 40 50 60 70
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source Voltage vs. Total
Charge
100
VGS = 0 V
TJ = 25°C
75
100
tr
tf
td(off)
50
25
10
1
td(on)
10
100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
0
0.60 0.70 0.80 0.90 1.00 1.10
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
100 VGS = 10 V
Single Pulse
10 TC = 25°C
100 ms
1 ms
10 ms
10 ms
1
0.1 RDS(on) Limit
Thermal Limit
Package Limit
dc
0.01
0.1
1
10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
http://onsemi.com
4
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ NVD6824NLT4G.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
NVD6824NLT4G | Power MOSFET ( Transistor ) | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |