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NVGS3443 데이터시트 PDF




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기능 Power MOSFET ( Transistor )
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NVGS3443 데이터시트, 핀배열, 회로
NTGS3443, NVGS3443
Power MOSFET
4.4 Amps, 20 Volts
PChannel TSOP6
Features
Ultra Low RDS(on)
Higher Efficiency Extending Battery Life
Miniature TSOP6 Surface Mount Package
These Devices are PbFree and are RoHS Compliant
NVGS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
Applications
Power Management in Portable and BatteryPowered Products,
i.e.: Cellular and Cordless Telephones, and PCMCIA Cards
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage Continuous
Thermal Resistance
JunctiontoAmbient (Note 1)
Total Power Dissipation @ TA = 25°C
Drain Current Continuous @ TA = 25°C
Pulsed Drain Current (Tp t 10 mS)
Thermal Resistance
JunctiontoAmbient (Note 2)
Total Power Dissipation @ TA = 25°C
Drain Current Continuous @ TA = 25°C
Pulsed Drain Current (Tp t 10 mS)
Thermal Resistance
JunctiontoAmbient (Note 3)
Total Power Dissipation @ TA = 25°C
Drain Current Continuous @ TA = 25°C
Pulsed Drain Current (Tp t 10 mS)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes for 10 Seconds
VDSS
VGS
RPqdJA
ID
IDM
RPqdJA
ID
IDM
RqJA
Pd
ID
IDM
TJ, Tstg
TL
20
"12
244
0.5
2.2
10
Volts
Volts
°C/W
Watts
Amps
Amps
128 °C/W
1.0 Watts
3.1 Amps
14 Amps
62.5
2.0
4.4
20
55 to
150
260
°C/W
Watts
Amps
Amps
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Minimum FR4 or G10 PCB, operating to steady state.
2. Mounted onto a 2 in square FR4 board (1 in sq, 2 oz. Cu. 0.06thick single
sided), operating to steady state.
3. Mounted onto a 2 in square FR4 board (1 in sq, 2 oz. Cu. 0.06thick single
sided), t t 5.0 seconds.
http://onsemi.com
4.4 AMPERES
20 VOLTS
RDS(on) = 65 mW
PChannel
1256
3
4
MARKING DIAGRAM &
PIN ASSIGNMENT
Drain Drain Source
654
1
TSOP6
CASE 318G
STYLE 1
443 M G
G
123
Drain Drain Gate
443 = Specific Device Code
M = Date Code*
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
NTGS3443T1G TSOP6 3000 / Tape & Reel
(PbFree)
NVGS3443T1G TSOP6 3000 / Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
December, 2012 Rev. 5
1
Publication Order Number:
NTGS3443T1/D




NVGS3443 pdf, 반도체, 판매, 대치품
NTGS3443, NVGS3443
TYPICAL ELECTRICAL CHARACTERISTICS
1200
1000
TJ = 25°C
VGS = 0 V
800
600 Ciss
400
200
0
0
Coss
Crss
2 4 6 8 10 12 14 16 18
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
20
5
QT
4 VGS
3 Q1
2
Q2
1 TJ = 25°C
ID = 4.4 A
0
0
1
2
3
4567
8
Qg, TOTAL GATE CHARGE (nC)
Figure 8. GatetoSource and
DraintoSource Voltage vs. Total Charge
1.3
1.2 ID = 250 mA
1.1
1
0.9
0.8
0.7
0.6
50 25
0
25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Gate Threshold Voltage Variation
with Temperature
150
4
VGS = 0 V
3
2
TJ = 150°C
1
TJ = 25°C
0
0.3 0.4
0.5 0.6 0.7 0.8 0.9
1
VSD, SOURCETODRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
http://onsemi.com
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