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부품번호 | NVGS3443T1G 기능 |
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기능 | Power MOSFET ( Transistor ) | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 6 페이지수
NTGS3443, NVGS3443
Power MOSFET
4.4 Amps, 20 Volts
P−Channel TSOP−6
Features
• Ultra Low RDS(on)
• Higher Efficiency Extending Battery Life
• Miniature TSOP−6 Surface Mount Package
• These Devices are Pb−Free and are RoHS Compliant
• NVGS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
Applications
• Power Management in Portable and Battery−Powered Products,
i.e.: Cellular and Cordless Telephones, and PCMCIA Cards
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA = 25°C
− Pulsed Drain Current (Tp t 10 mS)
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA = 25°C
− Pulsed Drain Current (Tp t 10 mS)
Thermal Resistance
Junction−to−Ambient (Note 3)
Total Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA = 25°C
− Pulsed Drain Current (Tp t 10 mS)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes for 10 Seconds
VDSS
VGS
RPqdJA
ID
IDM
RPqdJA
ID
IDM
RqJA
Pd
ID
IDM
TJ, Tstg
TL
−20
"12
244
0.5
−2.2
−10
Volts
Volts
°C/W
Watts
Amps
Amps
128 °C/W
1.0 Watts
−3.1 Amps
−14 Amps
62.5
2.0
−4.4
−20
−55 to
150
260
°C/W
Watts
Amps
Amps
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Minimum FR−4 or G−10 PCB, operating to steady state.
2. Mounted onto a 2 in square FR−4 board (1 in sq, 2 oz. Cu. 0.06″ thick single
sided), operating to steady state.
3. Mounted onto a 2 in square FR−4 board (1 in sq, 2 oz. Cu. 0.06″ thick single
sided), t t 5.0 seconds.
http://onsemi.com
4.4 AMPERES
20 VOLTS
RDS(on) = 65 mW
P−Channel
1256
3
4
MARKING DIAGRAM &
PIN ASSIGNMENT
Drain Drain Source
654
1
TSOP−6
CASE 318G
STYLE 1
443 M G
G
123
Drain Drain Gate
443 = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
NTGS3443T1G TSOP−6 3000 / Tape & Reel
(Pb−Free)
NVGS3443T1G TSOP−6 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
December, 2012 − Rev. 5
1
Publication Order Number:
NTGS3443T1/D
NTGS3443, NVGS3443
TYPICAL ELECTRICAL CHARACTERISTICS
1200
1000
TJ = 25°C
VGS = 0 V
800
600 Ciss
400
200
0
0
Coss
Crss
2 4 6 8 10 12 14 16 18
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
20
5
QT
4 VGS
3 Q1
2
Q2
1 TJ = 25°C
ID = −4.4 A
0
0
1
2
3
4567
8
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1.3
1.2 ID = −250 mA
1.1
1
0.9
0.8
0.7
0.6
−50 −25
0
25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Gate Threshold Voltage Variation
with Temperature
150
4
VGS = 0 V
3
2
TJ = 150°C
1
TJ = 25°C
0
0.3 0.4
0.5 0.6 0.7 0.8 0.9
1
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
http://onsemi.com
4
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부품번호 | 상세설명 및 기능 | 제조사 |
NVGS3443T1G | Power MOSFET ( Transistor ) | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |